Abstract:Ultra-precision thinning technology using workpiece self-rotational grinding followed by chemical mechanical polishing (CMP) is extensively applied in the integrated circuit manufacturing process, which enables to obtain large size ultra-thin silicon wafers with high material removal rate and low damage layer thickness. However, an in-depth understanding of the influence caused by ground surface topography on material removal mechanism in silicon CMP process has not been revealed yet. This work systematically investigates the contact characteristics of the wafer-pad interface and corrosion behaviors of the ground silicon wafer immersed in polishing solution. Firstly, some silicon wafers are ground using different wheels and subsequently polished. The material removal depth during the whole CMP process is measured. Then, the intrinsic model of polishing pad is determined via mechanical property tests. A finite element method is adopted to evaluate the contact status, displacement distortion and stress distribution at the contact region between pad and ground wafer surface. Moreover, the chemical reaction mechanism between ground silicon wafer and polishing solution is revealed by utilizing X-ray photoelectron spectroscopy and electrochemical analysis. The influence of wafer surface topography on corrosion resistance in CMP process is illustrated. Finally, corresponding experimental results are explained from an atomic scale by a ReaxFF reactive molecular dynamics simulation model. This presented study demonstrates the corrosion promotion principle of ground silicon wafer in CMP process.

Effects of Polishing Pressure on Electrochemical Characteristics of Silicon Wafers During Cmp

Effects of Process Parameters on Electrochemical Characteristics of Silicon Wafers During Chemical Mechanical Polishing

Effects of the Polishing Variables on the Wafer-Pad Interfacial Fluid Pressure in Chemical Mechanical Polishing of 12-Inch Wafer

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

The crystallographic change in sub-surface layer of the silicon single crystal polished by chemical mechanical polishing

CHEMICAL MECHANICAL POLISHING REMOVAL RATE AND MECHANISM OF SEMICONDUCTOR SILICON WITH NANO-SiO2 SLURRIES

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Electrochemical Behavior and Polishing Properties of Silicon Wafer in Alkaline Slurry with Abrasive CeO2

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Study on Lubricating Behavior in Chemical Mechanical Polishing

Chemical mechanical polishing: Theory and experiment

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Effects of Chemical Mechanical Polishing Parameters on Acoustic Emission Characteristics

Grinding and Lapping Induced Surface Integrity of Silicon Wafers and its Effect on Chemical Mechanical Polishing

Wear phenomena in chemical mechanical polishing

Effects of Film Stress on the Chemical Mechanical Polishing Process

Tribo-Electrochemical Performance of Polycrystalline Silicon during ECMP Simulating Process

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Effects of Suspending Abrasives on the Lubrication Properties of Slurry in Chemical Mechanical Polishing of Silicon Wafer