Electrical, Structural, Photoluminescence and Optical Properties of P-Type Conducting, Antimony-Doped SnO2 Thin Films

J. Ni,X. Zhao,X. Zheng,J. Zhao,B. Liu
DOI: https://doi.org/10.1016/j.actamat.2008.09.013
IF: 9.4
2008-01-01
Acta Materialia
Abstract:P-type transparent conducting antimony-doped tin oxide (ATO) films were successfully fabricated on quartz glass substrates by radio-frequency magnetron sputtering using a 20 mol.% Sb-doped SnO2 ceramic target. The deposited films were annealed at different temperatures for different durations. Hall effect results indicated that 973K was the optimum annealing temperature to get p-type ATO films with the highest hole concentration (5.83×1019cm–3). X-ray diffraction studies indicated that the preferred (101) orientation favored the formation of p-type conducting films. Photoluminescence spectra showed an intense UV luminescence peak near 362nm resulting from the band-edge exciton transition observed for p-type ATO films. UV–visible transmission spectra showed that p-type ATO films had high transparence. In addition, p-type conductivity was also confirmed by the non-linear characteristics of a p-type ATO/n-type ATO structure; the diode structure has an optical transmission of ∼60–85% in the visible light range.
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