Abstract:Over the last two decades, scanning tunnelling microscopy (STM) has become one of the most important ways to investigate the structure of crystal surfaces. STM has helped achieve remarkable successes in surface science such as finding the atomic structure of Si(111) and Si(001). For high-index Si surfaces the information about the local density of states obtained by scanning does not translate directly into knowledge about the positions of atoms at the surface. A commonly accepted strategy for identifying the atomic structure is to propose several possible models and analyze their corresponding {\em simulated} STM images for a match with the experimental ones. However, the number of good candidates for the lowest-energy structure is very large for high-index surfaces, and heuristic approaches are not likely to cover all the relevant structural models. In this article, we take the view that finding the atomic structure of a surface is a problem of stochastic optimization, and we address it as such. We design a general technique for predicting the reconstruction of silicon surfaces with arbitrary orientation, which is based on parallel-tempering Monte Carlo simulations combined with an exponential cooling. The advantages of the method are illustrated using the Si(105) surface as example, with two main results: (a) the correct single-step rebonded structure [e.g., Fujikawa {\em et al.}, Phys. Rev. Lett. 88, 176101 (2002)] is obtained even when starting from the paired-dimer model [Mo {\em et al.}, Phys. Rev. Lett. 65, 1020 (1990)] that was assumed to be correct for many years, and (b) we have found several double-step reconstructions that have lower surface energies than any previously proposed double-step models.

Theoretical Model and Experimental Analysis of STM Images on the Surface of the Monocrystalline Si

High-Resolution Scanning Tunneling Microscopy Imaging Of Si(111)-7 X 7 Structure And Intrinsic Molecular States

High-resolution Scanning Tunneling Microscopy Imaging of Si(1 1 1)-7 × 7 Structure and Intrinsic Molecular States

Studies of Beam Optics and Scattering in the Next Linear Collider Post-Linac Collimation System

Theoretical Investigation of an Intermediate in the STM Tip-Induced Atomic Process on H/Si(100) Surfaces

Scanning Tunneling Microscopy of Photoexcited Carriers at the Si(001) Surface

A new structural model for the SiC(0001)(3×3) surface derived from first principles studies

Scanning Tunneling Microscopy Of The Si(111)-7x7 Surface And Adsorbed Ge Nanostructures

Accurate Simulations of Scanning Tunneling Microscope: Both Tip and Substrate States Matter

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

High-Resolution Scanning Tunneling Microscopy for Molecules

First-Principles Simulation of Scanning Tunneling Microscopy Images of Individual Molecules in Alkanethiol Self-Assembled Monolayers on Au(111)

STM Study of Si(337) Surface

Reconstruction of silicon surfaces: a stochastic optimization problem

An atomic structural model of (23×23)-R30° reconstruction proposed for 3C–SiC(111) crystallized islands on Si(111) by C60 precursor

Scanning tunneling microscopy evidences for surface electron scattering by underlying atoms

Atomic scale imaging of monocrystalline Si （001） surface by molecular dynamic simulation

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

A new structural model for the SiC(0 0 0 1)(3 × 3) surface derived from first principles studies

A New Structural Model For The Sic(0001)(3 X 3) Surface Derived From First Principles Studies

Simulation of spin-polarized scanning tunneling microscopy on complex magnetic surfaces: Case of a Cr monolayer on Ag(111)