Influence of Annealing on Structural, Electrical and Optical Properties of Dy-doped ZnO Thin Films

Huiming Huang,Xuefeng Ruan,Guojia Fang,Meiya Li,X. Z. Zhao
DOI: https://doi.org/10.1088/0022-3727/40/22/026
2007-01-01
Journal of Physics D Applied Physics
Abstract:Transparent conductive Dy-doped zinc oxide thin films have been deposited on glass substrates by pulsed laser deposition technique. The effects of post-deposition annealing treatment on structural, electrical and optical properties of the ZnO : (Dy) thin films were investigated. The films show high transparency and conductivity. Van der Pauw measurements reveal that the films are n-type degenerate semiconductors. The electrical resistivity of the films deposited at 300 degrees C is 2.74 x 10(-4) Omega cm with a carrier density of 9.33 x 10(20) cm(-3) and a Hall mobility of 24.48 cm(2) V-1 s(-1). The resistivity can be further reduced to as low as 2.12 x 10(-4) Omega cm by post-deposition annealing at 420 degrees C for 2 h in nitrogen. Post-annealing increased the grain size and surface roughness of the films. The average transmission of the ZnO : (Dy) films (with a thickness about 529 nm) in the visible range is above 80%. The optical direct band gap value of the films is about 3.7 eV, which is slightly dependent on the annealing treatment in nitrogen.
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