A Facile, Low‐Cost, and Scalable Method of Selective Etching of Semiconducting Single‐Walled Carbon Nanotubes by a Gas Reaction

Hongliang Zhang,Yunqi Liu,Lingchao Cao,Dacheng Wei,Yu Wang,Hisashi Kajiura,Yongming Li,Kazuhiro Noda,Guangfu Luo,Lu Wang,Jing Zhou,Jing Lu,Zhengxiang Gao
DOI: https://doi.org/10.1002/adma.200800703
IF: 29.4
2008-01-01
Advanced Materials
Abstract:A facile scalable and low-cost gas-treatment method for selectively etching semiconductor single-walled carbon nanotubes (SWNTs) is developed. Using SO3 gas as the etchant at a temperature of 400 degrees C, semiconductor SWNTs can be selectively and efficiently removed, and after this gas treatment samples enriched with metallic SWNTs can be obtained.
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