Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction

Guangyu Zhang,Pengfei Qi,Xinran Wang,Yuerui Lu,Xiaolin Li,Ryan Tu,Sarunya Bangsaruntip,David Mann,Li Zhang,Hongjie Dai
DOI: https://doi.org/10.1126/science.1133781
IF: 56.9
2006-01-01
Science
Abstract:Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent “dry” chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.
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