Molecular Dynamics Simulation in Vacancy Defect Monocrystal Silicon Nanometric Grinding

Xiaoguang Guo,Zhang Liang,Zhuji Jin,Guo Dongming
DOI: https://doi.org/10.3969/j.issn.1004-132X.2013.10.002
2013-01-01
Abstract:Based on the first principles,a molecular dynamics model of the grinding process of vacancy defect monocrystal silicon was built and verified.The instantaneous distribution of atoms,the temperature,the grinding force,and the potential energy in atomic scale were analyzed.Then the micro-scale mechanism of the grinding process was explained,and the chip formation process and the machined surface formation mechanism were described.The impact of vacancy on processing process and surface quality was analyzed and the effect of vacancy was also investigated during the simulation process.
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