Abstract:For the promising semiconductor of GaN, the degradation of the GaN-based devices' performance may occur, when they are bombarded by high-energy charged particles in the applications of aerospace, astronomy, and nuclear-related areas. It is thus of great significance to explore the influence of irradiation on the microstructure and electronic properties of GaN and to reveal the internal relationship between the damage mechanisms and physical characteristics. By a combined density functional theory (DFT) and ab initio molecular dynamic (AIMD) study, we explored the low-energy recoil events in GaN and the effects of point defects on GaN. The threshold displacement energies (E d s) show a significant dependence on the recoil directions and the primary knock-on atoms. Moreover, the E d s for nitrogen atoms are smaller than those for gallium atoms, indicating that the displacement of nitrogen dominates under electron irradiation and the created defects are mainly nitrogen vacancy and interstitials. The formation energy of nitrogen vacancy and interstitial is smaller than that for gallium vacancy and interstitial, which is consistent with the AIMD results. Although the created defects improve the elastic compliance of GaN, these radiation damage states deteriorate its ability to resist external compression. Meanwhile, these point defects lead the Debye temperature to decrease and thus increase the thermal expansion coefficients of GaN. As for electronic properties of defective GaN, the point defects have various effects, i.e., V N (N vacancy), Ga int (Ga interstitial), N int (N interstitial), and Ga N (Ga occupying the N lattice site) defects induce the metallicity, and N Ga (N occupying the Ga lattice site) defect decreases the band gap. The presented results provide underlying mechanisms for defect generation in GaN, and advance the fundamental understanding of the radiation resistances of semiconductor materials.

Investigation on gallium nitride with N-vacancy defect nano-grinding by molecular dynamics

Investigation of vibration-assisted nano-grinding of gallium nitride via molecular dynamics

Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Wear Behaviors and Plastic Deformation Mechanisms Induced by Nano-Grinding of Indium-Doped Gallium Nitride Single Crystal

Molecular Dynamics Simulation of Laser Assisted Grinding of GaN Crystals

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Research on the material removal mechanism of vibration-assisted nano-scratch on single-crystal GaN by molecular dynamics

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Effect of lattice defects on the property of GaN crystal: A molecular dynamics simulation study

A combined AIMD and DFT study of the low-energy radiation responses of GaN

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

Unveiling the temperature-dependent deformation mechanisms of single crystal gallium nitride in nanoscratching

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Defects In Gallium Nitride Nanowires: First Principles Calculations

Deformation and removal mechanism of single crystal gallium nitride in nanoscratching

Abrasive machining induced surface layer damage behavior and formation mechanism of monocrystalline β-Ga 2 O 3 : A comparative study of nanoindentation and nanogrinding