Abstract:Single-crystal gallium nitride (GaN) is a semiconductor material known for its hardness and brittleness. This research aims to reveal the differences in the micro-mechanisms of material removal during traditional grinding and ultrasonic vibration-assisted grinding and to provide guidance for the high-efficiency, high-quality planarization processing of single-crystal GaN. To achieve this purpose, molecular dynamics (MD) simulation methods were used to establish a model (30 nm × 40 nm × 15 nm) of single-crystal GaN being scratched by a single abrasive grain with and without ultrasonic vibration assistance. The differences in the surface morphology and subsurface damage formation mechanisms of single-crystal GaN under conditions with and without ultrasonic assistance were compared. The results indicate that, compared to traditional grinding, the periodic ultrasonic vibrations reduce the normal force and result in a more uniform distribution of stress and temperature, thereby mitigating local stress concentration and thermal accumulation effects. Ultrasonic vibration alters the motion of the abrasive grain, expanding the material removal range from 7.384 to 10.315 nm, decreasing the number of residual atoms in the machining area, and lowering the chip pileup height at the leading edge of the abrasive grain from 2.063 to 1.528 nm. Additionally, the micro-shear deformation induced by ultrasonic vibrations helps to suppress brittle fracturing caused by excessive local stress, thus reducing the thickness of the damaged subsurface. At a scratch depth of 2 nm, the total length of dislocation lines in the ultrasonic-assisted scratch is reduced from 185.256 to 33.315 nm compared to traditional scratching. These findings offer new insights into the microscopic mechanisms of material removal in high-efficiency, high-quality grinding processes of single-crystal GaN.

Abrasive machining induced surface layer damage behavior and formation mechanism of monocrystalline β-Ga 2 O 3 : A comparative study of nanoindentation and nanogrinding

Deformation and fracture behaviors of monocrystalline β-Ga 2 O 3 characterized using indentation method and first-principles calculations

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

Study on Mechanism for Material Removal and Surface Generation by Molecular Dynamics Simulation in Abrasive Processes

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Understanding the machining mechanism in ultrasonic vibration-assisted nanogrinding of GaN

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic 8-Ga2o3 Single Crystals

Wear Behaviors and Plastic Deformation Mechanisms Induced by Nano-Grinding of Indium-Doped Gallium Nitride Single Crystal

The anisotropy dependence of deformation mechanism of cleavage planes in β-Ga2O3 single crystal

Deformation and removal mechanism of single crystal gallium nitride in nanoscratching

Enhancing the Mechanical Strength Ofβ-Ga2o3 with Al Alloying

Molecular Dynamics Simulation of Laser Assisted Grinding of GaN Crystals

Experimental investigation on axial ultrasonic-assisted grinding of different crystal surfaces of single-crystal gallium oxide

Experimental Investigation on the Surface and Subsurface Damages Characteristics and Formation Mechanisms in Ultra-Precision Grinding of SiC

Research on the material removal mechanism of vibration-assisted nano-scratch on single-crystal GaN by molecular dynamics

Surface Micro-Morphology Model Involved in Grinding of GaN Crystals Driven by Strain-Rate and Abrasive Coupling Effects

Investigation of machining mechanism of monocrystalline silicon in nanometric grinding

Mechanism of Surface Defects in Ultra-Precision Machining of Sesquioxide Laser Crystal Tm: GdScO3

Mechanism and Experimental Evaluation on Surface Morphology of GCr15SiMn with Ultrasonic Vibration Grinding

Monocrystalline Nickel Nanogrinding Subsurface Deformation-Layer Depth Study Based on Orthogonal Tests