Cu‐induced Poly‐si/sio2/α‐si Multilayer Film with High Reflectivity Across the Whole Visible Band

Wenyan Zhang,Dejie Li,Jian Wang
DOI: https://doi.org/10.1002/pssr.200903003
2009-01-01
physica status solidi (RRL) - Rapid Research Letters
Abstract:A glass-based poly-Si/SiO2/alpha-Si multilayer film with high reflectivity across the whole visible band is realized and reported in this letter, which could be used in plasma display panels to improve their luminescent efficiency. All the layers are deposited by dc sputtering at room temperature. The poly-Si layer is formed by Cu-induced alpha-Si crystallization with crystallization degree of similar to 73% and crystal grain size of similar to 48 nm. With alternating high refractive index of alpha-Si and poly-Si and low refractive index of SiO2, the total reflectivity is higher than 60% across most of the whole visible band and similar to 80% within the 400-700 nm range. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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