Abstract:Their outstanding electrical and optical properties make semiconducting single-walled carbon nanotubes (SWCNTs) highly suitable for charge transport and emissive layers in near-infrared optoelectronic devices. However, the luminescence spectra of SWCNT thin films on commonly used glass and Si/SiO2 substrates are often compromised by broadening of the main excitonic emission and unwanted low-energy sidebands. Surface passivation with a commercially available, low dielectric constant, cross-linked bis-benzocyclobutene-based polymer (BCB) enhances the emission properties of SWCNTs to the same level as hexagonal boron nitride (h-BN) flakes do. The presence of BCB suppresses sideband emission, especially from the Y1 band, which is attributed to defects introduced by the interaction of the nanotube lattice with oxygen-containing terminal groups of the substrate surface. The facile and reproducible deposition of homogeneous BCB films over large areas combined with their resistance against common solvents and chemicals employed during photolithography make them compatible with standard semiconductor device fabrication. Utilizing this approach, light-emitting (6,5) SWCNT network field-effect transistors are fabricated on BCB-treated glass substrates with excellent electrical characteristics and near-intrinsic electroluminescence. Hence, passivation with BCB is proposed as a standard treatment for substrates used for spectroscopic investigations of and optoelectronic devices with SWCNTs and other low-dimensional emitters.

Fabrication Of Luminescent Carbon Nanotubes

Sn-filled Si nanotubes fabricated by the facile DC arc discharge method and their photoluminescence property

Efficiently producing single-walled carbon nanotube rings and investigation of their field emission properties

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Extended Kataura Plot of Single-Walled Carbon Nanotubes and On-Demand Fabrication of Mixed-Dimensional Heterostructures

Selective Fabrication of Quasi-Parallel Single-Walled Carbon Nanotubes on Silicon Substrates

Fabrications And Characterizations Of 0.4nm-Sized Single-Wall Carbon Nanotube Arrays

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Large-Scale Fabrication of Suspended, Aligned, and Strained Single Walled Carbon Nanotube Networks

Fabrication of Ultralong and Electrically Uniform Single-Walled Carbon Nanotubes on Clean Substrates

Photoluminescence Spectral Imaging of Ultralong Single-Walled Carbon Nanotubes: Micromanipulation-Induced Strain, Rupture, and Determination of Handedness

Development of Microsturcture Based on Single-Wall Carbon Nanotube.

100 Mm Long, Semiconducting Triple‐Walled Carbon Nanotubes

Tunable Fabrication and Photoluminescence Property of SiC Nanowires with Different Microstructures

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

Flame-synthesis of Carbon Nanotubes on Silicon Substrates and Their Field Emission Properties

Fabrication of Single-Crystal Silicon Nanotubes with Sub-10 Nm Walls Using Cryogenic Inductively Coupled Plasma Reactive Ion Etching.

Fabrication of Micro/Nanotubes by Mask-Based Diffraction Lithography

Near-Intrinsic Photo- and Electroluminescence from Single-Walled Carbon Nanotube Thin Films on BCB-Passivated Surfaces

Microfabrication Of Single-Wall Carbon Nanotube One-Dimensional Unit

High-yield Synthesis of Millimetre-Long, Semiconducting Carbon Nitride Nanotubes with Intense Photoluminescence Emission and Reproducible Photoconductivity