Abstract:The two-dimensional electron gas (2DEG) generated at the LaAlO3/SrTiO3 interface has been in the focus of oxides research since its first discovery. Although oxygen vacancies play an important role in the generation of the insulator-to-metal transition of the SrTiO3 bare surface, their contribution at the LaAlO3/SrTiO3 interface remains unclear. In this work, we investigated a LaAlO3/SrTiO3 heterostructure with regional distribution of defect-based localized polar sites at the interface. Using static and time-resolved threshold photoemission electron microscopy, we prove that oxygen vacancies are induced near those polar sites, resulting in the increase of carrier density of the 2DEG states. In addition, oxygen-related surface states were uncovered, which we attributed to the release of lattice oxygen during the formation of oxygen vacancies. Such effects are mainly found spatially located around the defect sites at the buried interface, while other regions remain unaffected. Our results confirm that the itinerant electrons induced by oxygen vacancies can coexist with the charge transfer mechanism in the LaAlO3/SrTiO3 heterostructure, together leading to the formation of the metallic interface. These observations provide fundamental insights into the nature of LaAlO3/SrTiO3 interface based 2DEG and unique perspectives for potential applications.

Oxygen Vacancy Levels and Interfaces of Al2O3

Oxygen vacancy levels and electron transport in Al2O3

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First-principles Calculations of the Electronic Structure and Defects of Al2O3

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Ab Initio Study of Oxygen-Vacancy LaAlO 3 （001） Surface

Ab-initio study of oxygen vacancies in alpha-quartz

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Oxygen vacancies in high-k oxides

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

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Positron Annihilation Studies on the Behaviour of Vacancies in Laalo3/Srtio3 Heterostructures

Understanding the Clean Interface Between Covalent Si and Ionic Al2O3

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Understanding the Clean Interface Between Covalent Si and IonicAl2O3

Polarity-induced oxygen vacancies at LaAlO3|SrTiO3 interfaces

Oxygen-vacancy-induced charge carrier in n-type interface of LaAlO3 overlayer on SrTiO3 (001): interface vs bulk doping carrier

Oxygen-vacancy clustering and pseudogap behaviour at LaAlO3/SrTiO3 interface