Abstract:We study from first principles the luminescence of Lu$_2$SiO$_5$:Ce$^{3+}$ (LSO:Ce), a scintillator widely used in medical imaging applications, and establish the crucial role of oxygen vacancies (V$_O$) in the generated spectrum. The excitation energy, emission energy and Stokes shift of its luminescent centers are simulated through a constrained density-functional theory method coupled with a ${\Delta}$SCF analysis of total energies, and compared with experimental spectra. We show that the high-energy emission band comes from a single Ce-based luminescent center, while the large experimental spread of the low-energy emission band originates from a whole set of different Ce-V$_O$ complexes together with the other Ce-based luminescent center. Further, the luminescence thermal quenching behavior is analyzed. The $4f-5d$ crossover mechanism is found to be very unlikely, with a large crossing energy barrier (E$_{fd}$) in the one-dimensional model. The alternative mechanism usually considered, namely the electron auto-ionization, is also shown to be unlikely. In this respect, we introduce a new methodology in which the time-consuming accurate computation of the band gap for such models is bypassed. We emphasize the usually overlooked role of the differing geometry relaxation in the excited neutral electronic state Ce$^{3+,*}$ and in the ionized electronic state Ce$^{4+}$. The results indicate that such electron auto-ionization cannot explain the thermal stability difference between the high- and low-energy emission bands. Finally, a hole auto-ionization process is proposed as a plausible alternative. With the already well-established excited state characterization methodology, the approach to color center identification and thermal quenching analysis proposed here can be applied to other luminescent materials in the presence of intrinsic defects.

First-principles Study of Oxygen Vacancies in Lu2SiO5

Oxygen Vacancy in Litipo5 and Liti2(Po4)(3): A First-Principles Study

Ab initio Study of Luminescence in Ce-doped Lu$_2$SiO$_5$: The Role of Oxygen Vacancies on Emission Color and Thermal Quenching Behavior

First-Principles Study of Oxygen Vacancy Defects in β-quartz SiO2/Si Interfaces

The Influence of Oxygen Vacancies on Luminescence Properties of Na3lusi3o9:Ce3+

Oxygen vacancy induced electronic structure variation in the La0.2Sr0.8MnO3 thin film

First principles study of oxygen vacancy defects in amorphous SiO2

Oxygen Vacancies and Induced Changes in the Electronic and Magnetic Structures of La0.66sr0.33mno3: A Combined Ab Initio and Photoemission Study

Oxide enthalpy of formation and band gap energy as accurate descriptors of oxygen vacancy formation energetics

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Insight into the Mechanism of the Ionic Conductivity for Ln-Doped Ceria (ln = La, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, and Tm) Through First-Principles Calculation.

Predicting Oxygen Vacancy Non-Stoichiometric Concentration in Perovskites from First Principles

Positron Annihilation Studies on the Behaviour of Vacancies in Laalo3/Srtio3 Heterostructures

First principle thermodynamic study of oxygen vacancy at metal/oxide interface

Oxygen Vacancy Levels and Interfaces of Al2O3

Luminescence from oxygen vacancies in Lu$_{2}$SiO$_{5}$ crystal and ceramics at room temperature

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

First-principles study on the optical spectra of ZrO2 crystal with oxygen vacancy

Oxygen Deficiency Induced Strong Electron Localization In Lanthanum Doped Transparent Perovskite Oxide Basno3

First-principles investigation of positively charged and neutral oxygen vacancies in amorphous silica

Effect of oxygen vacancy on electronic structure and optical spectra of SrO crystal