Abstract:We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 heterostructure slabs with three LaAlO3 overlayers lead to the emergence of interface conductivity. Calculated defect formation energies reveal strong preference of hydrogen dopant atoms for surface sites for all structures and concentrations considered. Strong decrease of the defect formation energy of hydrogen adatoms with increasing thickness of the LaAlO3 overlayer and crossover from positive to negative values, taken together with the metallic conductivity induced by hydrogen adatoms, seamlessly explains the semiconductor-metal transition observed for these heterostructures as a function of the overlayer thickness. Moreover, we show that the potential drop and concomitant shift of (layer resolved) band edges is suppressed for the metallic configuration. Finally, magnetism with stable local moments, which form atomically thin magnetic layers at the interface, is generated by oxygen vacancies either at the surface or the interface, or by hydrogen atoms buried at the interface. In particular, oxygen vacancies in the TiO2 interface layer cause drastic downshift of the 3d e_g states of the Ti atoms neighboring the vacancies, giving rise to strongly localized magnetic moments, which add to the two-dimensional background magnetization.

Polarity-induced oxygen vacancies at LaAlO3|SrTiO3 interfaces

Oxygen-vacancy-induced charge carrier in n-type interface of LaAlO3 overlayer on SrTiO3 (001): interface vs bulk doping carrier

Origin of Insulating Behavior of the P-Type Laalo3/Srtio3 Interface: Polarization-Induced Asymmetric Distribution of Oxygen Vacancies

Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Stabilities of the intrinsic defects on SrTiO3 surface and SrTiO3/LaAlO3 interface

Surface defects and conduction in polar oxide heterostructures

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Tuning Conduction Mechanism Via Surface Termination and Point Defects in N-Type LaAlO3/SrTiO3 Interfaces

Interface-induced Polarization in SrTiO$_3$-LaCrO$_3$ Superlattices

Effect of Polar Distortion on Electronic Structures of (001) LaGaO3/SrTiO3 Interface

Inevitable high density of oxygen vacancies on the surface of LaAlO3/SrTiO3 heterostructures

A polarity-induced defect mechanism for conductivity and magnetism at polar-nonpolar oxide interfaces

Stability of Oxygen Vacancies at Metal/oxide Interfaces.

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Stability of Oxygen Vacancy at Metal/oxide Interfaces

Positron Annihilation Studies on the Behaviour of Vacancies in Laalo3/Srtio3 Heterostructures

Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface