Origin of Insulating Behavior of the P-Type Laalo3/Srtio3 Interface: Polarization-Induced Asymmetric Distribution of Oxygen Vacancies

Lixin Zhang,Xiang-Feng Zhou,Hui-Tian Wang,Jing-Jun Xu,Jingbo Li,E. G. Wang,Su-Huai Wei
DOI: https://doi.org/10.1103/physrevb.82.125412
IF: 3.7
2010-01-01
Physical Review B
Abstract:It is revealed from first-principles calculations that polarization-induced asymmetric distribution of oxygen vacancies plays an important role in the insulating behavior at p-type LaAlO3/SrTiO3 interface. The formation energy of the oxygen vacancy (V-O) is much smaller than that at the surface of the LaAlO3 overlayer, causing all the carriers to be compensated by the spontaneously formed V-O's at the interface. In contrast, at an n-type interface, the formation energy of V-O is much higher than that at the surface, and the V-O's formed at the surface enhance the carrier density at the interface. This explains the puzzling behavior of why the p-type interface is always insulating but the n-type interface can be conducting.
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