Abstract:We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 heterostructure slabs with three LaAlO3 overlayers lead to the emergence of interface conductivity. Calculated defect formation energies reveal strong preference of hydrogen dopant atoms for surface sites for all structures and concentrations considered. Strong decrease of the defect formation energy of hydrogen adatoms with increasing thickness of the LaAlO3 overlayer and crossover from positive to negative values, taken together with the metallic conductivity induced by hydrogen adatoms, seamlessly explains the semiconductor-metal transition observed for these heterostructures as a function of the overlayer thickness. Moreover, we show that the potential drop and concomitant shift of (layer resolved) band edges is suppressed for the metallic configuration. Finally, magnetism with stable local moments, which form atomically thin magnetic layers at the interface, is generated by oxygen vacancies either at the surface or the interface, or by hydrogen atoms buried at the interface. In particular, oxygen vacancies in the TiO2 interface layer cause drastic downshift of the 3d e_g states of the Ti atoms neighboring the vacancies, giving rise to strongly localized magnetic moments, which add to the two-dimensional background magnetization.

Stabilities of the intrinsic defects on SrTiO3 surface and SrTiO3/LaAlO3 interface

Tuning Conduction Mechanism Via Surface Termination and Point Defects in N-Type LaAlO3/SrTiO3 Interfaces

Inevitable high density of oxygen vacancies on the surface of LaAlO3/SrTiO3 heterostructures

Polarity-induced oxygen vacancies at LaAlO3|SrTiO3 interfaces

Tracing the formation of oxygen vacancies at the conductive LaAlO3/SrTiO3 interface via photoemission

Evolution of the SrTiO$_3$ surface electronic state as a function of LaAlO$_3$ overlayer thickness

Surface defects and conduction in polar oxide heterostructures

Reconstruction of Electrostatic Field at the Interface Leads to Formation of Two-Dimensional Electron Gas at Multivalent (110) Laalo3/Srtio3 Interfaces

Oxygen-vacancy-induced charge carrier in n-type interface of LaAlO3 overlayer on SrTiO3 (001): interface vs bulk doping carrier

Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction

Tracing the Formation of Oxygen Vacancies at the Conductive LaAlO<sub>3</sub>/SrTiO<sub>3</sub> Interface Via Photoemission

Infrared ellipsometry study of the photo-generated charge carriers at the (001) and (110) surfaces of SrTiO$_3$ crystals and the interface of corresponding LaAlO$_3$/SrTiO$_3$ heterostructures

Strain-induced Defect Superstructure on the SrTiO3(110) Surface.

Structure and ferromagnetic instability of the oxygen-deficient SrTiO$_3$ surface

Strain Induced Defect Superstructure on the Surface

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3

Conducting interfaces between amorphous oxide layers and SrTiO3(110) and SrTiO3(111)

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

The interplay of electronic reconstructions, lattice distortions, and surface oxygen vacancies in insulator-metal transition of LaAlO$_{3}$/SrTiO$_{3}$

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

First-principles characterization of the critical thickness for forming metallic states in strained LaAlO₃/SrTiO₃(001) heterostructure