Solution-processed high entropy metal oxides as dielectric layers with high transmittance and performance and application in thin film transistors

Zhihao Liang,Weijing Wu,Xiao Fu,Honglong Ning,Guoping Su,Hongcheng Wang,Tian Qiu,Zhao Yang,Rihui Yao,Junbiao Peng
DOI: https://doi.org/10.1016/j.surfin.2023.103147
IF: 6.2
2023-07-08
Surfaces and Interfaces
Abstract:High entropy metal oxides (HEMOs) are emerging materials with unique structures and functional properties, but it's barely researched as dielectric materials. This paper investigates solution-processed HEMOs as the dielectric material. Six HEMOs systems were compared and the role of various metal oxides in the high entropy system is revealed. It turns out that the (HfMgTiYZr)O x system has the most excellent dielectric properties with a low leakage current density of 2.9 × 10 −7 A/cm 2 @2MV/cm and a high dielectric constant of 13.0. Moreover, the transmittance of the films is over 88% in the range of the visible light. The high performances of the HEMOs derive from the complex internal structure and the single solid solution phase. Applying (HfMgTiYZr)O x as dielectric layers, the thin film transistors attain an I on/off of 6.3 × 10 8 , a mobility of 14.2cm 2 /vs, a ss of 0.34 V, and a Vth of 1.3 V. In this paper, we demonstrate that HEMOs have good dielectric properties and can be used in thin film transistors which implies a promising future in the application of electronic devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
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