A VHF Wide-Input Range CMOS Passive Rectifier With Active Bias Tuning

Xiaofei Li,Fangyu Mao,Yan Lu,Rui P. Martins
DOI: https://doi.org/10.1109/jssc.2020.3005814
2020-10-01
Abstract:Tiny implantable medical devices in millimeter size demand advanced wireless power solutions that operate at hundreds of megahertz and mainly use passive rectifiers for ac–dc power conversion. A conventional cross-connected (CC) rectifier can operate with high frequency and low input voltage but only achieves good efficiencies in a very narrow input power range, due to the shoot-through and reverse currents. This work presents a CMOS passive rectifier with active bias tuning (ABT), allowing a widely extended input range with high power conversion efficiency (PCE). In addition, we compensate for the process, voltage, and temperature variations with the ABT scheme that leads to a robust design for very-high-frequency (VHF) operation. Meanwhile, we propose a peak $V_{mathrm {OUT}}$ searching scheme to indicate the charging/discharging directions for the ABT. We obtain a bias-voltage balancing among stacked rectifier stages with a switched-capacitor network. The proposed rectifier is fabricated in a 65-nm CMOS process. Measurement results of three chips show that the proposed rectifier improves the PCE over a wide input range, with an average maximum PCE of 64.4%.
engineering, electrical & electronic
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