Abstract:The limited availability of Te poses challenges for the widespread application of Bi2Te3-based thermoelectric modules. In this work, we explored the thermoelectric module potential of Te-free PbSe by elevating its power factor through crystal growth and slight-tuning vacancy and interstitial defects. The outcomes revealed a gradual increase in the carrier concentration and a high room-temperature carrier mobility of similar to 1750 cm(2) V-1 s(-1), leading to an enhanced power factor of similar to 37.4 mu W cm(-1) K-2 in Pb1.006Se+0.0016 Al crystals. We grew PbSe crystals to minimize the impact of grain boundaries on the charge carrier transport. Subsequently, n-type PbSe crystals were produced by introducing extra Pb to occupy the intrinsic Pb vacancies, effectively minimizing vacancy scattering. Following this, a minute quantity of small-sized Al (<= 2 parts per thousand) was introduced, revealing that these surplus Al atoms served as cationic dopants, substituting for Pb, while also occupying interstitial positions. The interstitial doping increases the carrier concentration while maintaining carrier mobility due to the distinct dimensions between the interstitial atoms and mean free path of electrons. The consistently improved power factor with the suppression of thermal conductivity brings about a significantly high ZT value over the whole temperature. Specifically, the ZT values of the Pb1.006Se+0.0016Al crystal reached similar to 0.5 at 300 K, similar to 1.5 at 673 K, and the average ZT (ZT(ave)) reached similar to 1.1 at 300-773 K. Ultimately, a single-leg power generation efficiency similar to 7.1% was achieved in Pb1.006Se+0.0016Al crystal and a 7-pair module reached a maximum temperature cooling difference similar to 51.2 K at the high temperature side T-h of 363 K. These results indicate the potential for developing a cost-effective and high-performance thermoelectric module utilizing PbSe.

Ultrahigh carrier mobility contributes to remarkably enhanced thermoelectric performance in n-type PbSe

Rationally optimized carrier effective mass and carrier density leads to high average ZT value in n-type PbSe

Realizing Ultrahigh Thermoelectric Performance in n‐Type PbSe Through Lattice Planification and Introducing Liquid‐Like Cu Ions

High Carrier Mobility Promotes In‐Plane Thermoelectric Performance of N‐type PbSnS2 Crystals

Enhanced Thermoelectric Performance of N‐Type PbSe Through Semi‐Coherent Nanostructure by AgCuTe Alloying

Realizing High In-plane Carrier Mobility in N-type SnSe Crystals through Deformation Potential Modification

Robustly Boosting Thermoelectric Performance of N‐Type PbSe via Lattice Plainification and Dynamic Doping

Synergistically optimizing carrier and phonon transport properties in n-type PbTe through I doping and SnSe alloying

Multiple valence bands convergence and strong phonon scattering lead to high thermoelectric performance in p-type PbSe

Lattice Plainification Leads to High Thermoelectric Performance of P-Type PbSe Crystals

Enhancing Thermoelectric Performance of p-Type PbSe through Suppressing Electronic Thermal Transports

Realizing high-performance thermoelectric module through enhancing power factor via optimizing carrier mobility in n-type PbSe crystals

Remarkable Roles of Cu to Synergistically Optimize Phonon and Carrier Transport in N-Type PbTe-Cu2Te

Realizing High-Performance Thermoelectric Modules Through Enhancing the Power Factor Via Optimizing the Carrier Mobility in N-Type PbSe Crystals

Progressive carrier density optimization contributes to enhanced thermoelectric performance in Bi(Te, Se) compound

High-Ranged <i>ZT</i> Value Promotes Thermoelectric Cooling and Power Generation in n-Type PbTe

Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe

Synergistically optimizing interdependent thermoelectric parameters of n-type PbSe through introducing a small amount of Zn

High Thermoelectric Performance Realized in a BiCuSeO System by Improving Carrier Mobility Through 3D Modulation Doping.

Enhanced Thermoelectric Performance in N-Type Polycrystalline SnSe by PbBr2 Doping

Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS