Interfacial thermal resistance measurement sensitivity in time and spatial domains of FET-Raman for supported 2D materials

Zhicheng Deng,Jiahao Cai,Guantong Wang,Jing Liu
DOI: https://doi.org/10.1016/j.ijheatmasstransfer.2024.125810
IF: 5.2
2024-06-07
International Journal of Heat and Mass Transfer
Abstract:Opto-thermal Raman-based technique is widely used for measuring the interfacial thermal resistance ( R′′tc ) between 2D materials and substrate due to its high spatial resolutions. Frequency-domain energy transport-resolved Raman (FET-Raman) has been developed to characterize R′′tc without the need of Raman shift temperature coefficient and laser absorption coefficient. The FET-Raman constructs two energy transport states: steady state and transient state by employing a continuous wave laser and frequency-modulated laser to differentiate the contribution of R′′tc to the total thermal resistance under two energy transport states. This work discusses the effect of time and spatial domains on the interfacial thermal resistance measurement by a 3D heat conduction simulation in MoS 2 supported by fused silica. By running multiple simulations for a range of modulation frequency, laser spot size, and laser absorption depth, the results reveal that higher modulation frequency results in higher R′′tc measurement sensitivity. But the optimal modulation frequency leading to maximum measurement sensitivity depends on the laser spot size, and interfacial thermal resistance. For the SiO 2 /Si substrate, oxide layer thicker than 1000 nm can ensure the R′′tc measurement sensitivity.
engineering, mechanical,mechanics,thermodynamics
What problem does this paper attempt to address?