Engineering Gapless Edge States from Antiferromagnetic Chern Homobilayer

Xiaorong Zou,Runhan Li,Zhiqi Chen,Ying Dai,Baibiao Huang,Chengwang Niu
DOI: https://doi.org/10.1021/acs.nanolett.3c04304
IF: 10.8
2023-12-20
Nano Letters
Abstract:We put forward that stacked Chern insulators with opposite chiralities offer a strategy to achieve gapless helical edge states in two dimensions. We employ the square lattice as an example and elucidate that the gapless chiral and helical edge states emerge in the monolayer and antiferromagnetically stacked bilayer, characterized by Chern number C=-1 and spin Chern number CS=-1, respectively. Particularly, for a topological phase transition to the normal insulator in the stacked bilayer, a band...
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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