Gate-Tunable Antiferromagnetic Chern Insulator in Twisted Bilayer Transition Metal Dichalcogenides

Xiaoyu Liu,Yuchi He,Chong Wang,Xiao-Wei Zhang,Ting Cao,Di Xiao,and Di Xiao
DOI: https://doi.org/10.1103/physrevlett.132.146401
IF: 8.6
2024-04-04
Physical Review Letters
Abstract:A series of recent experimental works on twisted MoTe2 homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole doping of ν=−1 , and the fractional quantum anomalous Hall effect is observed at ν=−2/3 and ν=−3/5 . In this Letter, we investigate the electronic properties of AA-stacked twisted bilayer MoTe2 at ν=−2 by k -space Hartree-Fock calculations. We identify a series of phases, among which a noteworthy phase is the antiferromagnetic Chern insulator, stabilized by an external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. Our research proposes the potential of realizing a Chern insulator beyond ν=−1 , and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moiré superlattices. https://doi.org/10.1103/PhysRevLett.132.146401 © 2024 American Physical Society
physics, multidisciplinary
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