Abstract:Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that reported the evidence of the integer and fractional quantum spin Hall effects in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At {\nu} = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at {\nu} = -3. At {\nu} = -2.5, nonmonotonic temperature dependence of resistivity and large out-of-plane negative magnetoresistance have been observed, which likely arises from the frustrated liquid-like ground state and weak effective Ruderman-Kittel-Kasuya-Yosida interactions. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.

Moiré Fractional Chern Insulators I: First-principles calculations and Continuum Models of Twisted Bilayer MoTe$_2$

Fractional Chern Insulators vs. Non-Magnetic States in Twisted Bilayer MoTe$_2$

Fractional Chern Insulator in Twisted Bilayer

Robust non-Abelian even-denominator fractional Chern insulator in twisted bilayer MoTe$_2$

Fractional Chern Insulators in Twisted Bilayer MoTe$_2$: A Composite Fermion Perspective

Moiré Fractional Chern Insulators II: First-principles Calculations and Continuum Models of Rhombohedral Graphene Superlattices

Integer and fractional Chern insulators in twisted bilayer MoTe2

Direct magnetic imaging of fractional Chern insulators in twisted MoTe$_2$ with a superconducting sensor

Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides

Thermodynamic evidence of fractional Chern insulator in moiré MoTe2

Variational Mapping of Chern Bands to Landau Levels: Application to Fractional Chern Insulators in Twisted MoTe$_2$

Maximally Localized Wannier Functions, Interaction Models, and Fractional Quantum Anomalous Hall Effect in Twisted Bilayer MoTe2.

Recent Developments in Fractional Chern Insulators

Multiple Chern bands in twisted MoTe$_2$ and possible non-Abelian states

Stabilizing fractional Chern insulators via exchange interaction in moiré systems

Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Contrasting twisted bilayer graphene and transition metal dichalcogenides for fractional Chern insulators: an emergent gauge picture

Maximally Localized Wannier Orbitals, Interaction Models and Fractional Quantum Anomalous Hall Effect in Twisted Bilayer MoTe2

Particle-Hole Duality, Emergent Fermi Liquids, and Fractional Chern Insulators in Moire Flatbands