Jonah Herzog-Arbeitman,Yuzhi Wang,Jiaxuan Liu,Pok Man Tam,Ziyue Qi,Yujin Jia,Dmitri K. Efetov,Oskar Vafek,Nicolas Regnault,Hongming Weng,Quansheng Wu,B. Andrei Bernevig,Jiabin Yu
Abstract:The experimental discovery of fractional Chern insulators (FCIs) in rhombohedral pentalayer graphene twisted on hexagonal boron nitride (hBN) has preceded theoretical prediction. Supported by large-scale first principles relaxation calculations at the experimental twist angle of $0.77^\circ$, we obtain an accurate continuum model of $n=3,4,5,6,7$ layer rhombohedral graphene-hBN moiré systems. Focusing on the pentalayer case, we analytically explain the robust $|C|=0,5$ Chern numbers seen in the low-energy single-particle bands and their flattening with displacement field, making use of a minimal two-flavor continuum Hamiltonian derived from the full model. We then predict nonzero valley Chern numbers at the $\nu = -4,0$ insulators observed in experiment. Our analysis makes clear the importance of displacement field and the moiré potential in producing localized "heavy fermion" charge density in the top valence band, in addition to the nearly free conduction band. Lastly, we study doubly aligned devices as additional platforms for moiré FCIs with higher Chern number bands.
What problem does this paper attempt to address?
### Problems the paper attempts to solve
This paper aims to solve the problem of theoretical modeling of fractional Chern insulators (FCIs) observed in twisted rhombohedral five - layer graphene on a hexagonal boron nitride (hBN) substrate. Specifically, the goals of the paper are:
1. **Develop a reliable single - particle band - structure model**: Prepare for subsequent many - body calculations, especially for the fractional Chern insulator phenomena observed in experiments. This includes obtaining an accurate continuum model through large - scale first - principles calculations, and explaining the topological properties of low - energy single - particle bands and their flattening under a displacement field.
2. **Analyze and predict topological invariants**: For example, the Chern number, especially predicting non - zero valley Chern numbers in the ν = −4, 0 insulating states. These topological invariants are crucial for understanding the topologically ordered states in the system.
3. **Study the effects of the moiré potential and displacement field**: Explore how they affect the electronic structure, especially producing localized "heavy fermion" charge densities in the highest valence band and an almost free conduction band.
4. **Explore double - aligned devices as a platform for realizing higher - Chern - number bands**: Further study other possible moiré systems in the hope of discovering more fractional Chern insulators with high - Chern - number bands.
### Research background and motivation
Fractional Chern insulators (FCIs) are a class of topologically ordered states, usually appearing in partially filled Chern insulators. Previously, it was thought that this physical phenomenon required a non - zero magnetic field to be stabilized, but now there are two independent moiré platforms (firstly molybdenum ditelluride MoTe₂, and secondly rhombohedral five - layer graphene) that have shown some features of an FCI - like phase diagram under strictly zero - magnetic - field conditions. However, experimental results also show deviations from the typical FCI phase diagram due to the influence of the moiré potential. These deviations enable the observation of different phases and phase transitions through filling and displacement - field tuning in the same device, providing an unprecedented opportunity for theoretical prediction.
### Main contributions
- **First - principles calculations**: Through large - scale first - principles calculations of rhombohedral five - layer graphene at θ = 0.76715°, the correctly relaxed structure was obtained, which is an important feature not included in existing calculations.
- **Continuum model construction**: Based on the relaxed structure, the band structures of the rhombohedral graphene/hBN systems with different numbers of layers and stacking configurations were calculated using the Slater - Koster tight - binding model, and the validity of the model was verified by DFT + SK calculations.
- **Topological property analysis**: Through an effective 2×2 continuum model, the topological properties of low - energy bands, especially the changes in the Chern number, were analytically explained.
In summary, this paper, by combining first - principles calculations and continuum models, has studied in detail the fractional Chern insulator phenomena in the rhombohedral five - layer graphene/hBN system, providing theoretical support for further understanding its topological properties and experimental observations.