Engineering second-order topological insulators via coupling two first-order topological insulators

Lizhou Liu,Jiaqi An,Yafei Ren,Yingtao Zhang,Zhenhua Qiao,Qian Niu
2024-06-03
Abstract:We theoretically investigate the engineering of two-dimensional second-order topological insulators with corner states by coupling two first-order topological insulators. We find that the interlayer coupling between two topological insulators with opposite topological invariants results in the formation of edge-state gaps, which are essential for the emergence of the corner states. Using the effective Hamiltonian framework, We elucidate that the formation of topological corner states requires either the preservation of symmetry in the crystal system or effective mass countersigns for neighboring edge states. Our proposed strategy for inducing corner state through interlayer coupling is versatile and applicable to both $\mathbb{Z}_2$ topological insulators and quantum anomalous Hall effects. We demonstrate this approach using several representative models including the seminal Kane-Mele model, the Bernevig-Hughes-Zhang model, and the Rashba graphene model to explicitly exhibit the formation of corner states via interlater coupling. Moreover, we also observe that the stacking of the coupled $\mathbb{Z}_2$ topological insulating systems results in the formation of the time-reversal invariant three-dimensional second-order nodal ring semimetals. Remarkably, the three-dimensional system from the stacking of the Bernevig-Hughes-Zhang model can be transformed into second-order Dirac semimetals, characterized by one-dimensional hinge Fermi arcs. Our strategy of engineering second-order topological phases via simple interlayer coupling promises to advance the exploration of higher-order topological insulators in two-dimensional spinful systems.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The paper aims to address the issue of how to achieve a 2D second-order topological insulator by coupling two first-order topological insulators with opposite topological invariants. Specifically, the authors propose a theoretical framework that introduces interlayer coupling to disrupt the original edge states and form corner states. This approach is applicable not only to Z<sub>2</sub> topological insulators but also to quantum anomalous Hall effect systems. Additionally, the paper explores the possibility of constructing 3D higher-order topological semimetals by stacking these 2D topological insulators and demonstrates that under certain conditions, a second-order Dirac semimetal can be formed. The research results provide new methods for exploring higher-order topological insulators.