Abstract:Higher-order topological insulators (HOTIs) are a novel type of topological phases which supports $d$-dimensional topological boundary states in $D$-dimensional systems with $D-d>1$. In this work, we theoretically predict that interlayer couplings in AB-stacked bilayer transition-metal dichalcogenides (TMDs) lead to the emergence of extrinsic second-order topological phases, where corner states are induced by the band inversion of zigzag edge bands. We find that the systems feature a quantized multiband Berry phase defined for a zigzag nanoribbon geometry, unveiling the nontrivial topological properties of its two zigzag edges. With detailed investigation into the bilayer TMDs under different geometries, we find two types of boundary-obstructed corner states arising from different corner terminations of either the same type of or heterogeneous zigzag edges. The topological nature of these corner states and their degeneracy is further analyzed with both the crystalline symmetries of different geometries, and a topological phase transition of the Berry phase induced by a layer-dependent onsite energy.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: in AB - stacked bilayer transition - metal dichalcogenides (TMDs), the extrinsic higher - order topological phases induced by inter - layer coupling and the corresponding corner - state problems. Specifically, the author aims to theoretically predict and explain the following points: 1. **The influence of inter - layer coupling on topological phases**: Study how the inter - layer coupling in AB - stacked bilayer TMDs leads to the emergence of the second - order topological phase, especially in the case of zigzag edge - band inversion. 2. **The origin and characteristics of corner states**: Analyze two types of boundary - blocked corner states caused by different types of zigzag edge terminations, and explore the topological properties and degeneracy of these corner states. 3. **The role of Berry phase**: By defining a multi - band Berry phase for the zigzag nanoribbon geometry, reveal the non - trivial topological properties of the system, especially the non - trivial topological features of the two zigzag edges. 4. **Behavior under different geometries**: In - depth study of the behavior of these corner states and their changes during the topological phase transition under triangular, hexagonal and parallelogram geometries. ### Specific problem description - **Realization of higher - order topological insulators (HOTIs)**: Explore how to realize higher - order topological insulators in two - dimensional materials, especially in semiconductor materials such as TMDs with large band gaps and one - dimensional boundary states. - **Generation mechanism of corner states**: Explain why in AB - stacked bilayer TMDs, inter - layer coupling can induce zigzag edge - band inversion and generate corner states without relying on the crystal symmetry of the material. - **The relationship between Berry phase and topological phase transition**: Characterize the topological properties of the system by introducing Berry phase, and study what topological phase transitions will occur in the system when the inter - layer coupling strength and onsite energy are changed. ### Main findings - **Zigzag edge - band inversion**: In AB - stacked bilayer TMDs, inter - layer coupling can lead to zigzag edge - band inversion, thereby opening the boundary band gap and generating corner states. - **Two types of corner states**: Two different types of corner states are discovered, corresponding to the termination methods of the same type or different types of zigzag edges respectively. - **Change of Berry phase**: By calculating the multi - band Berry phase, the topological properties of the system under different parameters are revealed, and the process of topological phase transition is demonstrated. - **Influence of geometric structures**: The influence of different geometric structures (such as triangular, hexagonal and parallelogram) on corner states, including their degeneracy and distribution. ### Conclusion This research reveals a new extrinsic higher - order topological phase in AB - stacked bilayer TMDs. The appearance of its corner states does not depend on crystal symmetry, but is caused by inter - layer coupling and zigzag edge - band inversion. This finding not only enriches the research content of higher - order topological insulators, but also provides potential regulation means for future quantum applications. ### Related formulas - **Tight - binding Hamiltonian**: \[ \hat{H}=\hat{H}_{1st}+\hat{H}_{2nd}+\hat{H}_{int}+\frac{\mu}{2}(\hat{N}_1 - \hat{N}_2) \] where $\hat{H}_{1st}$ and $\hat{H}_{2nd}$ represent the single - layer Hamiltonians of the top and bottom layers respectively, $\hat{H}_{int}$ represents the inter - layer coupling term, and $\mu$ describes the onsite energy difference between the two layers. - **Berry phase**: \[ \gamma=-i\sum_l\log\det U(k_l) \] where $U_{mn}(k_l)=\langle\psi_m(k_l)|\psi_n(k_{l + 1})\rangle$ is an element of the link matrix, and $|\psi_m(k_l)\rangle$ is the Bloch wave function of the $m$ - th energy band at the discrete lattice momentum $k_l$. Through these formulas, the author describes in detail the physical phenomena in the system and verifies the theoretical predictions.

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