Unveiling the Synergistic Effect of Ferroelectric Polarization and Domain Configuration for Reversible Zinc Metal Anodes

Tao Chen,Fei Huang,Yinan Wang,Yi Yang,Hao Tian,Jun Min Xue

DOI: https://doi.org/10.1002/advs.202105980

IF: 15.1

2022-03-10

Advanced Science

Abstract:Advanced Science, EarlyView.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Electrocrystallization Regulation Enabled Stacked Hexagonal Platelet Growth Toward Highly Reversible Zinc Anodes

Zeyu Shen,Jiale Mao,Guoping Yu,Weidong Zhang,Shulan Mao,Wei Zhong,Hao Cheng,Junze Guo,Jiahui Zhang,Yingying Lu

DOI: https://doi.org/10.1002/anie.202218452

2023-01-01

Abstract:AbstractRealizing durative flattened and dendrite‐free zinc (Zn) metal configuration is the key to resolving premature battery failure caused by the internal short circuit, which is highly determined by the crystal growth in the electrocrystallization process. Herein, we report that regulating the molecular structure of the inner Helmholtz plane (HIP) can effectively convert the deposition into activation control by weakening the solvated ion adsorption at the interface. The moderated electrochemical reaction kinetics lower than the adatom self‐diffusion rate steers conformal stratiform Zn growth and dominant Zn (0001) texture, achieving crystallographic optimization. Through in situ mediation of electrolyte engineering, orientational plating and stripping behaviors at edge‐sites and tailored solvation structure immensely improve the utilization efficiency and total charge passed of Zn metal, even under extreme conditions, including high areal capacity (3 mAh cm−2) and wide temperature range (−40–60 °C).
Large Electrostrain Induced by Reversible Domain Switching in Ordered Ferroelectric Nanostructures with Optimized Geometric Configurations

Haoyun Chen,Xu Hou,Jiaxi Chen,Shaowei Chen,Puying Hu,Huaping Wu,Jie Wang,Jun Zhu

DOI: https://doi.org/10.1088/1361-6528/ab8fe3

IF: 3.5

2020-01-01

Nanotechnology

Abstract:Large electromechanical response of ferroelectric materials is particularly appealing for applications in functional devices, such as sensors and actuators. For conventional ferroelectric materials, however, the mechanical strain under an external electric field, i.e. the electrostrain, is often limited by the intrinsic electromechanical property of the materials. Domain engineering has been suggested as a practical way to overcome this limitation and to enhance the electrostrain. Here, we show from phase-field simulations that reversible domain switching in ordered ferroelectric nanostructures with optimized geometric configurations can enhance the electrostrain significantly. In the presence of an external electric field, the domains in such nanostructures can switch from a multi-domain state confined by the geometric configurations to a mono-domain state. It is interesting that the domains can switch back to the multi-domain state due to strong internal depolarization fields once the electric field is removed. As a result, accompanying the reversible domain switching behavior, a large and reversible electrostrain can be obtained. Going further, it is found that the temperature dependence of the large electrostrain is similar to that of polarization in such nanostructures. The present work opens a perspective to obtaining large electrostrain in nanoscale ferroelectrics, which holds great promise for designing electromechanical functional devices with high performance.
Highly Tunable Skyrmion-Like Polar Nanodomains for High-Density Ferroelectric Hard Disks

Hongying Chen,Wenda Yang,Cheng Li,Peijie Jiao,Zhiyu Liu,Chuanjie Lin,Yaoyao Chen,Guo Tian,Yu Deng,Yuefeng Nie,Yongjun Wu,Jun-Ming Liu,Zijian Hong,Xingsen Gao,Di Wu

DOI: https://doi.org/10.1063/5.0209179

IF: 15

2024-01-01

Applied Physics Reviews

Abstract:Emerging topological polar domains have a wide range of potential applications in electronic devices. It is critical to accurately manipulate these topological domains by electrical fields and explore their exotic properties for making more energy-efficient high-density non-volatile memories. Herein, we demonstrate that skyrmion-like polar nanodomains appear at room temperature in SrTiO3/PbTiO3 bilayer heterostructures by balancing the elastic and electrostatic energies via varying the SrTiO3 capping layer thickness. These polar nanodomains, stable at room temperature, can be electrically written, erased, and rewritten into the bilayer by applying an appropriate bias on the conductive tip of an atomic force microscope. The lateral size and location of these polar nanodomains can be precisely controlled. Moreover, ring-shaped conductive domain walls are observed around these polar nanodomains, with on/off ratios of more than two orders of magnitude with respect to the ferroelectric background. Based on these characteristics, the polar nanodomains can be created, erased, and probed electrically, suggesting applications for high-density ferroelectric hard disks.
Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric materials

Zhengqian Fu,Xuefeng Chen,Zhenqin Li,Tengfei Hu,Linlin Zhang,Ping Lu,Shujun Zhang,Genshui Wang,Xianlin Dong,Fangfang Xu

DOI: https://doi.org/10.1038/s41467-020-17664-w

IF: 16.6

2020-07-30

Nature Communications

Abstract:Abstract Benefitting from the reversible phase transition between antiferroelectric and ferroelectric states, antiferroelectric materials have recently received widespread attentions for energy storage applications. Antiferroelectric configuration with specific antiparallel dipoles has been used to establish antiferroelectric theories and understand its characteristic behaviors. Here, we report that the so-called antiferroelectric (Pb,La)(Zr,Sn,Ti)O 3 system is actually ferrielectric in nature. We demonstrate different ferrielectric configurations, which consists of ferroelectric ordering segments with either magnitude or angle modulation of dipoles. The ferrielectric configurations are mainly contributed from the coupling between A-cations and O-anions, and their displacement behavior is dependent largely on the chemical doping. Of particular significance is that the width and net polarization of ferroelectric ordering segments can be tailored by composition, which is linearly related to the key electrical characteristics, including switching field, remanent polarization and dielectric constant. These findings provide opportunities for comprehending structure-property correlation, developing antiferroelectric/ferrielectric theories and designing novel ferroic materials.

multidisciplinary sciences
High-density Array of Ferroelectric Nanodots with Robust and Reversibly Switchable Topological Domain States

Zhongwen Li,Yujia Wang,Guo Tian,Peilian Li,Lina Zhao,Fengyuan Zhang,Junxiang Yao,Hua Fan,Xiao Song,Deyang Chen,Zhen Fan,Minghui Qin,Min Zeng,Zhang,Xubing Lu,Shejun Hu,Chihou Lei,Qingfeng Zhu,Jiangyu Li,Xingsen Gao,Jun-Ming Liu

DOI: https://doi.org/10.1126/sciadv.1700919

IF: 13.6

2017-01-01

Science Advances

Abstract:The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.
Bimodal polymorphic nanodomains in ferroelectric films for giant energy storage

Yuhang Ren,Hongbo Cheng,Jun Ouyang,Onur Kurt,Jianjun Wang,Qinghua Zhang,Yuyao Zhao,Lin Gu,Long-Qing Chen

DOI: https://doi.org/10.1016/j.ensm.2022.03.027

IF: 20.4

2022-06-01

Energy Storage Materials

Abstract:Enhanced functional responses of ferroelectrics have often been achieved by complex compositional design of a morphotropic or polymorphic phase boundary. Here, we observe a pseudo-linear, ultra-slim polarization-electric field (P-E) hysteresis loop in simple composition, lead-free Ba(Zr,Ti)O3 of up to μm-thick. It features a low remnant polarization and a high maximum polarization after a delayed saturation process with a field-insensitive, thickness-scalable high energy efficiency of ∼90%. This giant energy storage performance is attributed to the self-assembled, bimodal polymorphic nanodomains consisting of two sets of coherent polymorphic nanodomains. The first set of domains has the best-matched, low index {110} interface. They manifest themselves as "entangled nanophases" and dominate in thinner or annealed films. The 2nd set of domains with a high-index {114} interface and an in-plane anisotropy leads to the largest reduction in bulk elastic energy. These domains show as "segregated nanophases" and prevail in as-grown thick films. The presence of multi-polar states in both sets of nanodomains helps reduce the remnant polarization and delay the polarization saturation. Furthermore, the segregated tetragonal phase in-plane nanodomains lead to a larger maximum polarization under a high poling field. Strain engineering of such nanodomain structures provides a promising alternative to chemical compositional design, for the optimization of dielectric thin films used in capacitive energy storage applications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Ferroelectric Materials: Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric-Field-Induced Competing Anisotropies (Adv. Mater. 2/2016).

Chen Aitian,Zhao Yonggang,Li Peisen,Zhang Xu,Peng Renci,Huang Haoliang,Zou Lvkuan,Zheng Xiaoli,Zhang Sen,Miao Peixian,Lu Yalin,Cai Jianwang,Nan Ce-Wen

DOI: https://doi.org/10.1002/adma.201670013

2016-01-01

Abstract:Y. Zhao and co-workers demonstrate a simple and effective method to investigate the angular dependence of exchange bias using one sample with different ratios and relative orientations of the anisotropies via the combination of exchange-biased systems and ferroelectric materials. As they describe on page 363, electric-field-controlled magnetization reversal without a bias magnetic field is also realized at room temperature in this system through electric-field-induced competing anisotropies.
Highly reversible zinc metal anode enabled by strong Brønsted acid and hydrophobic interfacial chemistry

Qingshun Nian,Xuan Luo,Digen Ruan,Yecheng Li,Bing-Qing Xiong,Zhuangzhuang Cui,Zihong Wang,Qi Dong,Jiajia Fan,Jinyu Jiang,Jun Ma,Zhihao Ma,Dazhuang Wang,Xiaodi Ren

DOI: https://doi.org/10.1038/s41467-024-48444-5

IF: 16.6

2024-05-21

Nature Communications

Abstract:Abstract Uncontrollable zinc (Zn) plating and hydrogen evolution greatly undermine Zn anode reversibility. Previous electrolyte designs focus on suppressing H 2 O reactivity, however, the accumulation of alkaline byproducts during battery calendar aging and cycling still deteriorates the battery performance. Here, we present a direct strategy to tackle such problems using a strong Brønsted acid, bis(trifluoromethanesulfonyl)imide (HTFSI), as the electrolyte additive. This approach reformulates battery interfacial chemistry on both electrodes, suppresses continuous corrosion reactions and promotes uniform Zn deposition. The enrichment of hydrophobic TFSI – anions at the Zn|electrolyte interface creates an H 2 O-deficient micro-environment, thus inhibiting Zn corrosion reactions and inducing a ZnS-rich interphase. This highly acidic electrolyte demonstrates high Zn plating/stripping Coulombic efficiency up to 99.7% at 1 mA cm –2 ( > 99.8% under higher current density and areal capacity). Additionally, Zn | |ZnV 6 O 9 full cells exhibit a high capacity retention of 76.8% after 2000 cycles.

multidisciplinary sciences
Giant shape memory and domain memory effects in antiferroelectric single crystals

Fangping Zhuo,Dragan Damjanovic,Qiang Li,Yaming Zhou,Yongjie Ji,Qingfeng Yan,Yiling Zhang,Yun Zhou,Xiangcheng Chu

DOI: https://doi.org/10.1039/c9mh00352e

IF: 13.3

2019-01-01

Materials Horizons

Abstract:We report irreversible and reversible antiferroelectric-ferroelectric phase transitions, shape memory and domain memory effects in (Pb,La)(Zr,Sn,Ti)O-3 antiferroelectric tetragonal single crystals. We find that electric-field-induced antiferroelectric to ferroelectric phase transition is an irreversible process at temperatures below the depolarization temperature (similar to 50 degrees C), and achieves a giant shape memory strain value of 0.70% at room temperature. With the help of an in situ polarized light microscope, we discover a reversible phase transition between antiferroelectric and ferroelectric phases and a domain memory effect during electric field cycling above the depolarization temperature. In addition, single crystal X-ray diffraction results reveal that field-induced transformations between incommensurate antiferroelectric and commensurate ferroelectric modulations enable the emergence of shape and domain memory effects. A physical picture is proposed to explain these phase-transformation-mediated memory effects. Their discovery is expected to stimulate a systematic research upsurge of domain engineering and structure-property relationships in the quest for developing new antiferroelectric or ferroelectric devices.
Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Pengfei Hou,Cheng Chen,Bo Li,Shuaizhi Zheng,Jinbin Wang,Xiangli Zhong,Min Liao

DOI: https://doi.org/10.1002/adfm.202011029

IF: 19

2021-03-02

Advanced Functional Materials

Abstract:Ferroelectric materials feature a switchable spontaneous electric polarization and can enable low‐power logic and nonvolatile memories. These applications require reliable and precise control of ferroelectric domains and domain walls in ferroelectric thin films. Mechanical manipulation is a promising route to engineer ferroelectric domains, but it has proved ineffective when going beyond a critical thickness. Here, multi‐step 90° switching polarization reversal processes in (111)‐oriented PbZr0.2Ti0.8O3 thin films by applying mechanical forces along the direction parallel to the domain bands are reported. By probing the interrelationships between the relevant order parameters, coupled lattice distortion and piezoelectricity is revealed to facilitate domain switching from downward to upward in PbZr0.2Ti0.8O3, a mechanism that is supported by the evolution of domains and electrical performances at different temperatures and under varying pressures, respectively. The multi‐step domain reversal processes render PbZr0.2Ti0.8O3 thin films an excellent candidate for multilevel data storage. The study's results have implications for the manipulation of polarization switching in ferroelectrics and open an avenue to domain reversal driven by mechanical loads for the development of next‐generation ferroelectric devices. This study demonstrates that the nano‐twinned ferroelectric domains can be manipulated in a mechanical way. The domain switching from downward to upward is realized by applying the tip force parallel to the domain bands. Our findings open an avenue to the engineering of ferroelectrics for multilevel information storage.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Shuzhen Yang,Ren-Ci Peng,Qing He,Yen-Lin Huang,Yijing Huang,Jan-Chi Yang,Tianzhe Chen,Jingwen Guo,Long-Qing Chen,Ying-Hao Chu,Ce-Wen Nan,Pu Yu

DOI: https://doi.org/10.1002/andp.201800130

2018-01-01

Annalen der Physik

Abstract:Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well-aligned 71 degrees nonpolar domain walls in BiFeO3. Such an interfacial conductivity is induced by the creation of up-polarized nano-domains near the 71 degrees domain walls, as revealed by the combination of the piezo-response force microscopy (PFM) and conducting atomic force microscopy (c-AFM) imaging techniques, as well as phase-field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.
Enhancing ferroelectric photovoltaic effect by polar order engineering

Lu You,Fan Zheng,Liang Fang,Yang Zhou,Liang Z Tan,Zeyu Zhang,Guohong Ma,Daniel Schmidt,Andrivo Rusydi,Le Wang,Lei Chang,Andrew M Rappe,Junling Wang,Liang Z. Tan,Andrew M. Rappe

DOI: https://doi.org/10.1126/sciadv.aat3438

IF: 13.6

2018-07-06

Science Advances

Abstract:Destabilizing the polar order unexpectedly boosts the ferroelectric photovoltaic performance in bismuth ferrite.

multidisciplinary sciences
Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Peng Gao,Heng-Jui Liu,Yen-Lin Huang,Ying-Hao Chu,Ryo Ishikawa,Bin Feng,Ying Jiang,Naoya Shibata,En-Ge Wang,Yuichi Ikuhara

DOI: https://doi.org/10.1038/ncomms11318

IF: 16.6

2016-01-01

Nature Communications

Abstract:At the ferroelectric surface, the broken translational symmetry induced bound charge should significantly alter the local atomic configurations. Experimentally revealing the atomic structure of ferroelectric surface, however, is very challenging due to the strong spatial variety between nano-sized domains, and strong interactions between the polarization and other structural parameters. Here, we study surface structures of Pb(Zr0.2Ti0.8)O3 thin film by using the annular bright-field imaging. We find that six atomic layers with suppressed polarization and a charged 180° domain wall are at negatively poled surfaces, no reconstruction exists at positively poled surfaces, and seven atomic layers with suppressed polarization and a charged 90° domain wall exist at nominally neutral surfaces in ferroelastic domains. Our results provide critical insights into engineering ferroelectric thin films, fine grain ceramics and surface chemistry devices. The state-of-the-art methodology demonstrated here can greatly advance our understanding of surface science for oxides.
Ferroelectric-Enhanced cathode kinetics toward High-Performance aqueous Zinc-Ion batteries

Yue Li,Xiaosha Cui,Jianfeng Yan,Yaxiong Zhang,Erqing Xie,Jiecai Fu

DOI: https://doi.org/10.1016/j.jcis.2023.07.097

IF: 9.9

2023-07-25

Journal of Colloid and Interface Science

Abstract:Rechargeable aqueous zinc ion batteries (AZIBs) offer promising potential for large-scale energy storage systems due to their high affordability and safety. However, their practical applications are hindered by the undesired rate capability and cycling stability of the used cathode, attributed to sluggish ions kinetics during charge–discharge process. Herein, we propose an electric field balancing strategy to regulate the electrolyte ions behavior by constructing a ferroelectric interface on the cathode surface using a prototypical of MnO 2 -based cathode. An appropriate thickness coating of ferroelectric materials coating (i.e., β-PVDF) on the MnO 2 surface is theoretically and experimentally demonstrated to enhance the ion kinetics due to the optimized electrical distribution during electrochemical operations. Further comprehensive electrochemical mechanism studies reveal that the ferroelectric interface on the MnO 2 @β-PVDF not only promotes the diffusion of Zn 2+ but also reduces the electrochemical overpotential (17.6 mV), resulting in improved electrochemical reversibility and capacity performance. The resultant MnO 2 @β-PVDF cathode exhibits the highest capacity of 277.6 mAh g −1 (at 0.1 A g −1 ) and capacity retention of 68.6% after 120 cycles, surpassing both the pristine MnO 2 and non-ferroelectric materials coated MnO 2 electrodes. This success presents a new approach to enhance the overall electrochemical performance of the cathodes for the practical application of AZIBs.

chemistry, physical
Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

Mingqiang Li,Bo Wang,Heng-Jui Liu,Yen-Lin Huang,Jingmin Zhang,Xiumei Ma,Kaihui Liu,Dapeng Yu,Ying-Hao Chu,Long-Qing Chen,Peng Gao

DOI: https://doi.org/10.1016/j.actamat.2019.04.003

IF: 9.4

2019-01-01

Acta Materialia

Abstract:Reversible switching of non-180° ferroelastic domains that largely alters the local strain distribution enables many electromechanical, electromagnetic and electroacoustic applications. However, in thin films, the ferroelastic domain walls are usually believed to be immobile because of the interface clamping and/or dislocation pinning. Here, using in situ and aberration-corrected transmission electron microscopy, we directly observe reversible switching of individual 90° domains in dislocation-free PbTiO3 thin films and uncover the weakened interface clamping effect. We find the tetragonality is suppressed to ∼1.017 while the polarization vectors rotate 45° in the a-domain near the interface. These huge structural distortions at the interface is mainly responsible for the weakened clamping effect and thus the ability to switch ferroelastic domains. The switching is fully reversible (i.e., either electric field or mechanical stress can re-establish the erased domain) regardless of polarization orientation of the c-domain matrix. Phase-field modeling also shows excellent agreement with experimental observations. Our study reveals the mechanism of controllable and reversible ferroelastic domain switching, enabling the design of new actuators, sensors, and electromagnetic devices.
Partial Ferroelastic Domain Mediated Ferroelectric Domain Switching

Yi. Zhang,Linze Li,Yinghao Chu,Xiaoqing Pan

DOI: https://doi.org/10.1017/s1431927617008789

IF: 4.0991

2017-01-01

Microscopy and Microanalysis

Abstract:The fundamental understanding of domain switching in ferroelectric thin films is critical for the development of ferroelectric devices. In ferroelectric PbZr0.2Ti0.8O3 (PZT) thin films, full ferroelastic adomains extending to the film surface are frequently observed. These a-domains can significantly affect the ferroelectric switching behaviors in the local nanoregions surrounding them. For example, it has been observed that full a-domains in tetragonal PZT thin films can hinder the motion of 180° domain walls by forming charged ferroelastic domain walls, leading to incomplete domain switching [1]. On the other hand, partial a-domain terminating beneath the film surface can also exist in PZT films. However, the domain switching behaviors mediated by these partial a-domain areas are not elucidated yet.
Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Yu-Chen Liu,Meng-Xun Xie,Yu-Huai Li,Sheng-Zhu Ho,Chin-Han Huang,Min-Yuan Huang,Chun-Wei Huang,Yi Chou,Chih-Yen Chen,Yi-Chia Chou,Yi-Chun Chen,Heng-Jui Liu,Jan-Chi Yang

DOI: https://doi.org/10.1021/acsaelm.1c00528

IF: 4.494

2021-08-03

ACS Applied Electronic Materials

Abstract:Thin film engineering, utilizing proper control of crystalline orientation, strain, thickness, and defect density in thin films, has offered tremendous degrees of freedom for researchers to modify the physical properties, phase stability, and domain architectures in a wide spectrum of functional materials. This work unveils a naturally formed superdomain architecture arising from the low-orientation-symmetry-induced energetically degenerate state in a (101)-oriented tetragonal Pb(Zr,Ti)O3 epitaxial film. Different from conventional (101)-oriented/(110)-oriented domains found in (101)-oriented tetragonal Pb(Zr,Ti)O3 epitaxial heterostructures, these superdomains are composed of (101)-oriented domains with an alternative arrangement of opposite out-of-plane polarizations. Additionally, the conjunction between these superdomains has been found as another variant of the 90° domain wall that can exist in the low-symmetric preferred crystallographic orientation. The superdomains simultaneously exhibit an atypical piezoresponse hysteresis loop with additional metastable states, corresponding to the multistate ferroelastic domain switching process. This work gives distinct insight into the correlation between the domain pattern, lattice symmetry, and polarity switching, offering an effective way for exploring and engineering ultrafine domain features in tetragonal ferroelectrics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00528.AFM images of PZT films with different thicknesses and time-dependent PFM images for the stability test of domain structures (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Facile Control of Ferroelectricity Driven by Ingenious Interaction Engineering

Tie Zhang,Yi Zhang,Jun‚ÄźYi Li,Meng‚ÄźMeng Lun,Li‚ÄźZhuang Chen,Da‚ÄźWei Fu

DOI: https://doi.org/10.1002/smll.202301364

IF: 13.3

2023-04-24

Small

Abstract:Targeted modified anions can induce ferroelectricity and result in an enhanced ferroelectric ordering indirectly. The facile optimization strategy takes full advantage of structural flexibility of hybrid materials and provides a totally novel and expansive platform for construction of ferroelectrics and optimization of ferroelectricity in corresponding fields. Construction of ferroelectric and optimization of macroscopic polarization has attracted tremendous attention for next generation light weight and flexible devices, which brings fundamental vitality for molecular ferroelectrics. However, effective molecular tailoring toward cations makes ferroelectric synthesis and modification relatively elaborate. Here, the study proposes a facile method to realize triggering and optimization of ferroelectricity. The experimental and theoretical investigation reveals that orientation and alignment of polar cations, dominated factors in molecular ferroelectrics, can be controlled by easily processed anionic modification. In one respect, ferroelectricity is induced by strengthened intermolecular interaction. Moreover, ‚Čą50% of microscopic polarization enhancement (from 8.07 to 11.68¬†¬ĶC¬†cm‚ąí2) and doubling of equivalent polarization direction (from 4 to 8) are realized in resultant ferroelectric FEtQ2ZnBrI3 (FEQZBI, FEtQ = N‚Äźfluoroethyl‚Äźquinuclidine). The work offers a totally novel platform for control of ferroelectricity in organic‚Äďinorganic hybrid ferroelectrics and a deep insight of structure‚Äďproperty correlations.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
The Technique to Symmetrize Domain Switching Hysteresis Loops in LiNbO3 Domain-Wall Nanodevices with Improved Polarization Retention

Xiao Zhuang,Chao Wang,An Quan Jiang

DOI: https://doi.org/10.1063/5.0095892

IF: 4

2022-01-01

Applied Physics Letters

Abstract:Ferroelectric devices have wide applications in nonvolatile random-access memories, sensors, actuators, and transducers. The built-in potential at the interfaces could result in poor polarization retention. Here, we found an effective way to independently adjust two coercive fields of LiNbO3 mesa-like domain wall devices in contact to two side electrodes at the surface. Taking advantage of the electrode shielding effect on the depolarization field across an interfacial layer, the near-zero coercive field increases almost linearly with respect to the extending length of one side electrode covering the tail of the reversed domain, enabling nonvolatile ferroelectric domain wall devices in good polarization retention and fast operation speeds.
Colossal electrocaloric effect in an interface-augmented ferroelectric polymer

Shanyu Zheng,Feihong Du,Lirong Zheng,Donglin Han,Qiang Li,Junye Shi,Jiangping Chen,Xiaoming Shi,Houbing Huang,Yaorong Luo,Yurong Yang,Padraic O'Reilly,Linlin Wei,Nicolas de Souza,Liang Hong,Xiaoshi Qian

DOI: https://doi.org/10.1126/science.adi7812

IF: 56.9

2023-12-01

Science

Abstract:The electrocaloric effect demands the maximized degree of freedom (DOF) of polar domains and the lowest energy barrier to facilitate the transition of polarization. However, optimization of the DOF and energy barrier—including domain size, crystallinity, multiconformation coexistence, polar correlation, and other factors in bulk ferroelectrics—has reached a limit. We used organic crystal dimethylhexynediol (DMHD) as a three-dimensional sacrificial master to assemble polar conformations at the heterogeneous interface in poly(vinylidene fluoride)–based terpolymer. DMHD was evaporated, and the epitaxy-like process induced an ultrafinely distributed, multiconformation-coexisting polar interface exhibiting a giant conformational entropy. Under a low electric field, the interface-augmented terpolymer had a high entropy change of 100 J/(kg·K). This interface polarization strategy is generally applicable to dielectric capacitors, supercapacitors, and other related applications.

multidisciplinary sciences

Unveiling the Synergistic Effect of Ferroelectric Polarization and Domain Configuration for Reversible Zinc Metal Anodes

Electrocrystallization Regulation Enabled Stacked Hexagonal Platelet Growth Toward Highly Reversible Zinc Anodes

Large Electrostrain Induced by Reversible Domain Switching in Ordered Ferroelectric Nanostructures with Optimized Geometric Configurations

Highly Tunable Skyrmion-Like Polar Nanodomains for High-Density Ferroelectric Hard Disks

Unveiling the ferrielectric nature of PbZrO3-based antiferroelectric materials

High-density Array of Ferroelectric Nanodots with Robust and Reversibly Switchable Topological Domain States

Bimodal polymorphic nanodomains in ferroelectric films for giant energy storage

Ferroelectric Materials: Angular Dependence of Exchange Bias and Magnetization Reversal Controlled by Electric-Field-Induced Competing Anisotropies (Adv. Mater. 2/2016).

Highly reversible zinc metal anode enabled by strong Brønsted acid and hydrophobic interfacial chemistry

Giant shape memory and domain memory effects in antiferroelectric single crystals

Mechanical Manipulation of Nano‐Twinned Ferroelectric Domain Structures for Multilevel Data Storage

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Enhancing ferroelectric photovoltaic effect by polar order engineering

Atomic Mechanism of Polarization-Controlled Surface Reconstruction in Ferroelectric Thin Films.

Ferroelectric-Enhanced cathode kinetics toward High-Performance aqueous Zinc-Ion batteries

Direct Observation of Weakened Interface Clamping Effect Enabled Ferroelastic Domain Switching

Partial Ferroelastic Domain Mediated Ferroelectric Domain Switching

Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Facile Control of Ferroelectricity Driven by Ingenious Interaction Engineering

The Technique to Symmetrize Domain Switching Hysteresis Loops in LiNbO3 Domain-Wall Nanodevices with Improved Polarization Retention

Colossal electrocaloric effect in an interface-augmented ferroelectric polymer