Frequency Doubler Utilizing Hetero Gate Dielectric Tunnel Field-Effect Transistor
Ju Hong Min,Dongho Shin,Hyunwoo Kim,Janghyun Kim
DOI: https://doi.org/10.1088/1402-4896/ad30e3
2024-03-08
Physica Scripta
Abstract:The Frequency Division Multiplexing (FDM) has been used in wireless communication to transmit large amounts of data. FDM separates and transmits multiple information streams through a single communication channel simultaneously. The capacity to store information increases with higher frequencies. However, the problem of maintaining stability arises with high frequencies. To address this, a frequency multiplier (FM) is employed to convert a low-frequency source, which is easier to stabilize, into a high frequency. To ensure the proper functioning of FM, it is crucial to achieve symmetrical matching between two adjacent waveforms of two cycles of output from one cycle of input. This paper introduces three techniques for FM operation. Firstly, the implementation of tunnel FET (TFET) is proposed to solve the issue of harmonics, which commonly occurs in existing FMs. TFET possesses ambipolar properties, making it suitable for solve harmonic issue. Secondly, high-k (HK) dielectric materials are utilized to enhance on-current and ambipolar current. Lastly, hetero gate dielectrics (HG) are employed to increase the ambipolar current, ensuring its equivalence to the on-current. This contrasts with existing TFETs that use HG to reduce ambipolar current. We can control on-current and ambipolar current, respectively, by adjusting HK length at the source-side and HK at the drain-side using the HG structure. In addition, achieving matching currents is essential for obtaining symmetrical adjacent output waveforms, which is the primary objective of FM. From the proposed structure, we confirmed that frequency doubling is possible by symmetrically matching on-current and ambipolar current for FM to operate normally.
physics, multidisciplinary