Abstract:Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreover, they show diverse electronic properties from antiferromagnetic metal to half metal and to semiconductors with band gaps ranging from 0.31 to 2.57 eV. Among the studied nanosheets, the MoSi2N4 and WSi2N4 monolayers yield appropriate band edge positions, high electron and hole mobilities, and strong visible light absorption, highly promising for applications in optoelectronics and photocatalytic water splitting. The MoSi2N4 and WSi2N4 monolayers are also predicted to show outstandingly high lattice thermal conductivity of 440 and 500 W/mK, respectively. For the first time we show that machine learning interatomic potentials trained over small supercells can be employed to examine the flexoelectric and piezoelectric properties of complex structures. As the most exciting finding, WSi2N4, CrSi2N4 and MoSi2N4 are found to exhibit the highest piezoelectric coefficients, outperforming all other-known 2D materials. Our results highlight that MA2Z4 nanosheets not only undoubtedly outperform the transition metal dichalcogenides family but also can compete with graphene for applications in nanoelectronics, optoelectronic, energy storage/conversion and thermal management systems.

Electronic structure and optical spectra of MSi2N4 (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study

Electronic properties and quasiparticle model of monolayer MoSi<sub>2</sub>N<sub>4</sub>

The First-Principle Study on Tuning Optical Properties of MA2Z4 by Cr Replacement of Mo Atoms in MoSi2N4

Electrocatalytic activity of MoSi2N4 monolayers decorated with single transition metal atoms: a computational study

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Monolayer ThSi 2 N 4 : An indirect-gap semiconductor with ultra-high carrier mobility

Magnetic and Electronic Properties of 2D MSX (M = Ti, V, Co and Ni, X = Br and I)

Adsorption of metal atoms on MoSi2N4 monolayer: A first principles study

Prediction of protected band edge states and dielectric tunable quasiparticle and excitonic properties of monolayer MoSi$_2$N$_4$

Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles

First-principle calculation study of intrinsic point defects and doping performance of MoSi 2 N 4

Two-dimensional MSi2N4 (M = Ge, Sn, and Pb) monolayers: Promising new materials for optoelectronic applications

Tunable structural phases and electronic properties of group V MSi2N4 (M = V, Nb, Ta) nanosheets via surface hydrogenation: a first-principles study

Composition-dependent absorption of radiation in semiconducting MSi2Z4 Monolayers

Strain‐Induced Magnetism in MSi2N4 (M = V, Cr): A First‐Principles Study

Two-dimensional type-II MSi2N4/InS (M = Mo, W) heterostructures for photocatalysis

Tunable electronic properties and optoelectronic characteristics of MoGe2N4 /SiC van der Waals heterostructure

Theoretical predictions of the electronic, optical and thermodynamic properties of the C40-type TMSi2 (TM = V, Nb and Ta) disilicides

Tunable Electronic Properties of Novel 2D Janus MSiGeN4 (M = Ti, Zr, Hf) Monolayers by Strain and External Electric Field

Tunable spin polarization and electronic structure of bottom-up synthesized MoSi$_2$N$_4$ materials

First-principles investigation of two-dimensional iron molybdenum nitride: A double transition-metal cousin of MoSi2N4(MoN) monolayer with distinctive electronic and topological properties