The effect of γ -ray irradiation on voltage-controlled magnetism of HfZrO/CoFeB Hall bar device

Wei Cao,Jia Chen,Peiyue Yu,Lei Zhao,Yanru Li,Meiyin Yang,Jing Xu,Jianfeng Gao,Bingjun Yang,Lei Yue,Zuo Chao,Yan Cui,Jun Luo
DOI: https://doi.org/10.1016/j.jmmm.2023.170695
IF: 3.097
2023-04-05
Journal of Magnetism and Magnetic Materials
Abstract:We investigate the total ionizing dose (TID) effect on the voltage-controlled magnetic anisotropy (VCMA) Hall bar device based on HfZrO/CoFeB hybrid film. Devices under test are exposed to 1.17MeV 60 Co γ-ray at the dose rate of 50 rad(Si)/s. The Anomalous Hall measurement is performed at several certain irradiation dosages. The results show that the VCMA effect is enhanced with the accumulation of irradiation dosage. We propose a mechanism of interface trapped charges to explain this phenomenon. Thus, our work indicates that the magnetic tunneling junction based on HfZrO/CoFeB hybrid film is a promising building block for radiation-hard VCMA-MRAM (magneto-resistive random-access memory).
materials science, multidisciplinary,physics, condensed matter
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