Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf 0.5 Zr 0.5 O 2 heterostructure

Bao Zhang,Chunlong Li,Peizhen Hong,Zongliang Huo
DOI: https://doi.org/10.1063/5.0054593
IF: 4
2021-07-12
Applied Physics Letters
Abstract:The magneto-electric coupling (MEC) effect has been considered an effective method for the voltages controlled magnetic anisotropy in traditional ferroelectric/ferromagnetic structures. Unlike traditional perovskite ferroelectrics, the ferroelectric hafnium-based oxides hold great potential for use in the complementary metal oxide semiconductors (CMOS) circuit with the advantages of CMOS compatibility and easy scaled-down and lower leakage current. In this article, the MEC effects in the PtCoRu/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) heterostructure have been investigated using the polar magneto-optical Kerr effect microscopy and anomalous Hall effect. The major modification of perpendicular magnetic anisotropy of the PtCoRu thin film was controlled obviously within the ±4 V polarized voltages of the Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) film, accompanying with the coercivity field and remnant magnetization significantly decreased. The Hall voltages of PtCoRu in Hall bar devices were also controlled effectively under ±3 V polarized voltages. Such a finding proposes a more optimized method for the magnetic logic gates and memories based on voltage-controlled magnetic anisotropy in future.
physics, applied
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