Identification of compressive strain in thin ferroelectric Al 1- x Sc x N films by Raman spectroscopy

Yukimura Tokita,Takuya HOSHII,Hitoshi WAKABAYASHI,Kazuo TSUTSUI,Kuniyuki Kakushima
DOI: https://doi.org/10.35848/1347-4065/ad2f16
IF: 1.5
2024-02-29
Japanese Journal of Applied Physics
Abstract:Abstract Compressive strain in thin ferroelectric Al1-xScxN films with different Sc atom concentrations (x) on sapphire substrates was identified by Raman spectroscopy measurement. Both E2H and A1(LO) spectra showed a blue shift while thinning the Al1-xScxN film thicknesses. The shift was enhanced with higher Sc atom concentration. A stress of the order of 200 MPa was applied from the substrate interface, resulting in a strain of the order of 10-4. The presence of the compressive strain at the bottom interface can be correlated to the increase in the coercive field for thinner Al1-xScxN films.
physics, applied
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