Abstract:The incorporation of rare-earth elements in wurtzite nitride semiconductors, e.g., scandium alloyed aluminum nitride (ScAlN), promises dramatically enhanced piezoelectric responses, critical to a broad range of acoustic, electronic, photonic, and quantum devices and applications. Experimentally, however, the measured piezoelectric responses of nitride semiconductors are far below what theory has predicted. Here, we show that the use of a simple, scalable, post-growth thermal annealing process can dramatically boost the piezoelectric response of ScAlN thin films. We achieve a remarkable 3.5-fold increase in the piezoelectric modulus, d33 for 30% Sc content ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN. The enhancement in piezoelectricity has been unambiguously confirmed by three separate measurement techniques. Such a dramatic enhancement of d33 has been shown to impact the effective electromechanical coupling coefficient kt2 : increasing it from 13.8% to 76.2%, which matches the highest reported values in millimeter thick lithium niobate films but is achieved in a 100 nm ScAlN with a 10,000 fold reduction in thickness, thus promising extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond 5G applications. By utilizing a range of material characterization techniques, we have elucidated the underlying mechanisms for the dramatically enhanced piezoelectric responses, including improved structural quality at the macroscopic scale, more homogeneous and ordered distribution of domain structures at the mesoscopic scale, and the reduction of lattice parameter ratio (c/a) for the wurtzite crystal structure at the atomic scale. Overall, the findings present a simple yet highly effective pathway that can be extended to other material families to further enhance their piezo responses.

The Piezoelectricity of AlScN Thin Films under High-Pressure Regime

Preparation Technique Of Aln Piezoelectric Thin Film

Low temperature sputtering deposition of Al1−xScxN thin films: Physical, chemical, and piezoelectric properties evolution by tuning the nitrogen flux in (Ar + N2) reactive atmosphere

High Quality Co-Sputtering AlScN Thin Films for Piezoelectric Lamb-Wave Resonators

Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

Experimental and theoretical studies of effective piezoelectric coefficients of 2-2 connectivity AlN/AlScN composite piezoelectric films

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

First-principles investigation of mechanical, electronic and optical properties of Al 3 Sc intermetallic compound under pressure

High Rate Deposition of Piezoelectric AlScN Films by Reactive Magnetron Sputtering from AlSc Alloy Targets on Large Area

In Situ Synchrotron XRD Characterization of Piezoelectric Al1-xScxN Thin Films for MEMS Applications

First-Principle Studies on the Influence of Anisotropic Pressure on the Physical Properties of Aluminum Nitride

Role of Oxygen on Structure and Piezoelectric Properties of Al0.65Sc0.35 N Thin Films

Deposition of ScAIN Thin Film Using RF-sputtering Method

Piezoelectric ultra-sensitive aluminum nitride thin film on flexible aluminum substrate

Electro-Acoustic Properties of Scandium-Doped Aluminum Nitride (ScxAl1-xN) Material and its Application to Phononic Crystal-Coupled SAW Devices

Effects of Sputtering Atmosphere on the Properties of C-Plane ScAlN Thin Films Prepared on Sapphire Substrate

Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (1120)al0.56sc0.44n Films

Effects of High-Temperature Thermal Annealing on the Crystal Structure and Phase Separation in Sputtered ScAlN Thin Films

Unprecedented Enhancement of Piezoelectricity in Wurtzite Nitride Semiconductors via Thermal Annealing

High Performance AlScN Thin Film Based Surface Acoustic Wave Devices with Large Electromechanical Coupling Coefficient

Alscn Thin Film Based Surface Acoustic Wave Devices with Enhanced Microfluidic Performance