Abstract:Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few decades, no other industry has seen growth even comparably close to that experienced by the semiconductors industry. This has all been made possible by the unbroken string of ingenious breakthroughs by brilliant minds that have been working tirelessly to shrink down transistors. The latest of which is the use of high-k dielectrics and a return to metal gates combined with 3D-transistor architectures. This has been the enabling technology for the transition from the 90 nm node to the 45 nm node, allowing us to shrink our transistors further without losing additional gate control. The fundamental reason for using a high-k gate dielectric compared to SiO2 is that shrinking our gate oxide further, which is already at a few angstroms, is no longer a feasible option to gain additional gate control. High-k dielectric overcome this by exploiting the fundamental physics of capacitors and the materials science of dielectrics to provide a viable option to increase gate control without the need for successively thinner gate oxides. Hafnium Oxide is the most studied and popular of such materials. Its high dielectric constant ~16-25 and interface stability with silicon at operating temperatures make it an ideal candidate for use in current CMOS technology. Despite its deceivingly simple appearance, the processes involved in the fabrication of such high-k HfO2/Si interfaces are full of process subtleties and nuances. In this term paper we hope to explore the physics and materials science of these high-k HfO2/Si interfaces, discussing the challenges and ways to overcome them when it comes to its actual fabrication, and how this ultimately affects our device performance.

Spin coating high‐k multicomponent (Al,Ti,V,Zr,Hf)Ox films with sub‐nm EOT for MOS‐based electronic devices

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

High-performance spin-coated aluminum oxide dielectric fabricated by a simple oxygen plasma-treatment process

UV-Ozone-Assisted Solution-Processed High- k ZrO$_\text{2}$ for MoS$_{\text{2}}$ Field-Effect Transistors

Observation of MOSFET-like behavior of a TFT based on amorphous oxide semiconductor channel layer with suitable integration of atomic layered deposited high-k gate dielectrics

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

Forming Semiconductor/dielectric Double Layers by One-Step Spin-Coating for Enhancing the Performance of Organic Field-Effect Transistors

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Fabrication and characteristics of ZnO MOS capacitors with high- K HfO 2 gate dielectrics

Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications

High-k materials processing: Atomic layer deposition of Al 2O3

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Application of Solution-Processed High-Entropy Metal Oxide Dielectric Layers with High Dielectric Constant and Wide Bandgap in Thin-Film Transistors

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance