Joining of SiO2 glass and substrate using In49Sn active solder in air

L. C. Tsao,Yu-Shu Chia,Ming-Che Li

DOI: https://doi.org/10.1007/s10854-023-11816-6

2024-01-01

Abstract:The joining processes of many devices, such as sensor photonic, MEMS, and biomedical devices, must be entirely flux free. This research presents a direct ultrasonic-assisted active soldering (UAAS) technology for a flux-free glass/substrate (glass, Si wafer, sapphire) bonding process using In49Sn active solder at low temperature in air. The joint microstructures were examined by optical microscopy and scanning electron microscopy (SEM) coupled with energy-dispersive spectrometry (EDS). Results showed that the joints were nearly void-free. The active Lutetium element (Lu) was found to be segregated at the interface of the active solder/substrate joint and played an important role in reliable joining at low temperature. The shear strengths were 3.87 ± 0.50 MPa for glass/glass, 2.76 ± 0.59 MPa for glass/Si wafer, and 3.02 ± 0.43 MPa for glass/sapphire joints. The failure mode of the joints was a mixture of cohesive failure and adhesive fracture.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied