Abstract:Effectively suppressing lattice thermal conductivity is a critical step for improving the thermoelectric performance.Taking open framework Si , 24 a potential thermoelectric material and a newly synthesized cage-like Si allotrope, as an example, we systematically investigate the lattice thermal conductivity of this new structure filled with alkaline-earth guest atoms (X@Si , X = Mg, Ca, Sr, and Ba) by combining first-principles 24 calculation and phonon Boltzmann transport theory.The calculated lattice thermal conductivity is obviously decreased as guest atoms are inserted in the void sites of the Si framework, which is a common phenomenon for the guest-host systems.However, it is surprising to find that the 24 thermal conductivity of this new filler structure presents a prominent element dependency.Inserting Ca into Si framework generally leads to 3 to 24 10 times lower thermal conductivity than that with other alkaline-earth atom fillers, and the value along zz crystal direction of 0.59 W/mK is even lower than that of amorphous silicon, despite the intrinsic thermal conductivity of pristine Si is as high as 21.25 W/mK.Such ultra-low thermal 24 conductivity is found to be closely related to the strong harmonic interatomic interaction among guest and host atoms of Ca@Si system.The 24 strong interaction gives rise to anomalous contraction effect on the Si lattice (the volume abnormally decreases) and more dispersive phonon 24 branches in low frequency range, which boosts the three-phonon scattering channels (reflected by the weighted phase space) and eventually suppresses the thermal conductivity of Si .Finally, based on a simple and effective lattice chain model, we reproduce the abnormal thermal 24 phenomenon observed in Ca@Si , and further demonstrate that the origin stems from the strong interaction between Ca and Si atoms.These 24 findings shed light on a new physical mechanism for the reduction in thermal conductivity of Ca@Si , which offer a promising approach to 24 improve the thermoelectric efficiency of Si related materials.

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