Abstract:Electroplated copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (trough silicon via) structures, fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grains and grain boundaries in the films. Porous or sparse grain boundaries cause the increase in electrical resistivity and the embrittlement of the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on Wiedemann-Franz law. Since copper interconnections are used for not only electrical conductor but also thermal heat conductor, it is important to clarify the relationship between the crystallinity and thermal properties of the films. In this study, the local distributions of the crystallinity and physical properties were investigated experimentally. As the result of the temperature distribution due to local Joule heating along an interconnection, it was suggested that the variation in the quality of the grain boundaries in the electroplated copper thin-films caused the non-uniformity of the resistivity and thus, Joule heating in the thin films. In this study, the effect of the seed layer material on the thermal properties of the electroplated copper thin film was investigated. When a Ru seed layer was deposited as a buffer layer between the electroplated copper thin film and the Ta diffusion barrier layer, both the crystallinity and uniformity of grain boundaries in the electroplated copper films were improved since lattice mismatch between copper and the seed layer metal was decreased. The improvement of the crystallinity increased the long-term reliability of the interconnections under the loads of electromigration and stress-induced migration.

Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

Fringing Field Effects on Electrical Resistivity of Semiconductor Nanowire-Metal Contacts

The Effect of Carbon Nanotube Chirality on the Electrical Conductivity of Polymer Nanocomposites Considering Tunneling Resistance

Transmission gaps from corrugations

Effects of nanoscale surface roughness on the resistivity of ultrathin epitaxial copper films

Microstructural Modification of Metallic Thin Films Via High-Frequency Alternating Current Treatment at Room Temperature

Corrugation-Induced Metal-Semiconductor Transition in Single-Wall Carbon Nanotubes with A Small Radius

Electron localization in two-dimensional surface-corrugated conductors: manifestation of competing scattering mechanisms

Geometric Effects Of A Quarter Of Corrugated Torus

The Geometric Potential of a Double-Frequency Corrugated Surface

Electrical properties of disordered films of van der Waals semiconductor WS2 on paper

Geometric Effects on the Electronic Structure and the Bound States in Annular Corrugated Wires

Thickness-dependent conductivity of nanometric semiconductor thin films

Improvement of Interface and Electrical Properties in Carbon Nanotube/nanocrystalline Copper Composite Films

Anisotropic Electronic Conduction in Metal Nanofilms Grown on a One-Dimensional Surface Superstructure

Thermal conductivity reduction in rough silicon nanomembranes

Tuning the ground state of cuprate high-critical-temperature superconducting thin films by nanofaceted substrates

Improvement of Thermal Conductivity of Electroplated Copper Interconnections by Controlling Their Crystallinity

Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity

Nanocorrugation-Induced Forces Between Electrically Neutral Metallic Objects.

Influence of Grain Boundary Scattering on the Electrical and Thermal Conductivities of Polycrystalline Gold Nanofilms