Abstract:Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

Atomically Sharp 1D Interfaces in 2D Lateral Heterostructures of VSe 2 ─NbSe 2 Monolayers

Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers

A van der Waals pn heterojunction with organic/inorganic semiconductors

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Band Alignment Engineering in Two-Dimensional Lateral Heterostructures

Diverse Atomically Sharp Interfaces And Linear Dichroism Of 1t' Res2-Rese2 Lateral P-N Heterojunctions

Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments

Lateral epitaxial growth of two-dimensional heterostructure linked by gold adatoms

Synthetic Semimetals with van der Waals Interfaces

Controllable Synthesis of WSe2-WS2 Lateral Heterostructures via Atomic Substitution

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

Interlayer coupling and ultrafast hot electron transfer dynamics in metallic VSe2/graphene van der Waals heterostructures

Two-Dimensional Gase/Mose2 Misfit Bilayer Heterojunctions by Van Der Waals Epitaxy

Lateral Heterostructures: 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis (Adv. Funct. Mater. 27/2021)

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Semiconducting van der Waals Interfaces as Artificial Semiconductors

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

Epitaxial Growth of Two-Dimensional Magnetic Lateral and Vertical Heterostructures

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions