Abstract:Piezoelectric micromachined ultrasound transducers (PMUTs) have gained significant popularity in the field of ultrasound ranging and medical imaging owing to their small size, low power consumption, and affordability. The scar-free "MIS" (micro-hole inter-etch and sealing) process, a novel bulk-silicon manufacturing technique, has been successfully developed for the fabrication of pressure sensors, flow sensors, and accelerometers. In this study, we utilize the MIS process to fabricate cavity diaphragm structures for PMUTs, resulting in the formation of a flat cavity diaphragm structure through anisotropic etching of (111) wafers in a 70 °C tetramethylammonium hydroxide (TMAH) solution. This study investigates the corrosion characteristics of the MIS technology on (111) silicon wafers, arranges micro-pores etched on bulk silicon around the desired cavity structure in a regular pattern, and takes into consideration the distance compensation for lateral corrosion, resulting in a fully connected cavity structure closely approximating an ortho-hexagonal shape. By utilizing a sputtering process to deposit metallic molybdenum as upper and lower electrodes, as well as piezoelectric materials above the cavity structure, we have successfully fabricated aluminum nitride (AlN) piezoelectric ultrasonic transducer arrays of various sizes and structures. The final hexagonal PMUT cells of various sizes that were fabricated achieved a maximum quality factor (Q) of 251 and a displacement sensitivity of 18.49 nm/V across a range of resonant frequencies from 6.28 MHz to 11.99 MHz. This fabrication design facilitates the achievement of IC-compatible and cost-effective mass production of PMUT array devices with high resonance frequencies.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a piezoelectric micromachined ultrasonic transducer (PMUT) based on the micro - pore mutual etching and sealing (MIS) process, in order to achieve ultrasonic transmission and reception with high sensitivity, low loss and high resonance frequency. Specifically, the paper focuses on the following points: 1. **Application of new manufacturing techniques**: Use the MIS process to manufacture PMUT on (111) silicon wafers, and form a flat cavity - membrane structure through anisotropic wet etching. This process can avoid the surface roughness problems in traditional manufacturing methods and improve the quality and flatness of the thin film. 2. **Study of etching characteristics**: Study the etching characteristics of the MIS technology on (111) silicon wafers, arrange the pores reasonably, consider the lateral etching distance compensation, and thus form a completely connected cavity structure close to a regular hexagon. 3. **Material selection and deposition**: Deposit molybdenum metal as the upper and lower electrodes by sputtering process, and deposit the piezoelectric material aluminum nitride (AlN) on the cavity structure, successfully preparing PMUT arrays of different sizes and structures. 4. **Performance optimization**: Through optimized design, the maximum quality factor (Q) of the PMUT unit reaches 251, the displacement sensitivity reaches 18.49 nm/V, and it shows excellent performance in the resonance frequency range from 6.28 MHz to 11.99 MHz. 5. **Potential for large - scale production**: This design is conducive to the large - scale production of IC - compatible and cost - effective PMUT array devices with high resonance frequencies. In conclusion, this paper aims to improve the manufacturing method of PMUT through the MIS process, enhance its performance, and provide technical support for its applications in fields such as ultrasonic ranging and medical imaging.

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