Fabrication and Characterization of AlN Based Piezoelectric Micromachined Ultrasonic Transducer for Contact Sensing

Dan Gong,Han Cai,Yanming Xia,Shenglin Ma,HuanLiu,Yihsiang Chiu,Yufeng Jin
DOI: https://doi.org/10.1109/icept.2018.8480577
2018-01-01
Abstract:In this paper, we present an aluminum nitride (AlN) based Piezoelectric Micro-machined Ultrasonic Transducer (PMUT) for contact sensing, which is a suspended stacked layers Si/Mo electrode /AlN/Al electrode in Silicon substrate. In order to obtain a Si elastic layer with a small thickness, DRIE Si process is utilized to make a deep cavity on the backside of Si substrate to suspend the stacked layers of PMUT device. AlN based PMUT sample is fabricated, having a suspended stacked layers of Si/Mo/AlN/Al measured about 5μm/0.1μm /0.8μm/1μm respectively in the thickness, 100μm in the radius of Si film. The AlN film has a measured surface roughness of 5nm by AFM and has (001) orientation peak by XRD analysis.
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