Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

S. -H. Cheng,K. Zou,F. Okino,H. R. Gutierrez,A. Gupta,N. Shen,P. C. Eklund,J. O. Sofo,J. Zhu,S.-H. Cheng
DOI: https://doi.org/10.48550/arXiv.1005.0113
2010-05-01
Mesoscale and Nanoscale Physics
Abstract:We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$\Omega$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$\Omega$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.
What problem does this paper attempt to address?