Abstract:Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.

Wide bandgap semiconductor from a hidden 2D incommensurate graphene phase

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

Fabrication and Characterization of Graphene Derived from SiC

Semiconducting Graphene on Silicon from First-Principles Calculations

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Bonding characteristics of the interfacial buffer layer in epitaxial graphene via density functional theory

Periodic Nanoarray of Graphene pn‐Junctions on Silicon Carbide Obtained by Hydrogen Intercalation

Bandgap engineering of two-dimensional semiconductor materials

Epitaxial graphene on SiC(0001): More than just honeycombs

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor

Quasi-Two-Dimensional SiC and SiC2: Interaction of Silicon and Carbon at Atomic Thin Lattice Plane

Triggering Superconductivity, Semiconducting States, and Ternary Valley Structure in Graphene Via Functionalization with Si-N Layers

Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study

Non-equilibrium carrier dynamics and band structure of graphene on 2D tin

Two-Dimensional Superlattice: Modulation of Band Gaps in Graphene-Based Monolayer Carbon Superlattices

Large Bandgap of Pressurized Trilayer Graphene

Substrate-induced band gap opening in epitaxial graphene

Substrates, electron-phonon interactions and the modification of graphene band gaps