A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

J. Hicks,A. Tejeda,A. Taleb-Ibrahimi,M. S. Nevius,F. Wang,K. Shepperd,J. Palmer,F. Bertran,P. Le Fèvre,J. Kunc,W. A. de Heer,C. Berger,E. H. Conrad

DOI: https://doi.org/10.1038/nphys2487

2012-10-19

Abstract:A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to develop a scalable and reliable method for fabricating graphene nanostructures with semiconductor properties to overcome the problems existing in current methods. Specifically, the existing methods for fabricating semiconductor - metal - semiconductor graphene networks have the following limitations:

1. **Stringent lithography requirements**: These methods rely on high - precision lithography techniques and are difficult to achieve large - scale production and reproducibility.
2. **Process - induced disorder**: During the manufacturing process, graphene may introduce defects or disorder, affecting its electrical properties.
3. **Scalability issues**: Existing methods are difficult to achieve large - scale, controllable production.

To solve these problems, the authors propose a brand - new bottom - up method to fabricate metal - semiconductor - metal nanostructures with wide band gaps by utilizing the interaction between SiC (silicon carbide) substrates and graphene. This method does not require chemical functionalization or finite - size patterning but is achieved by controlling the geometry of the SiC substrate.

### Main findings and contributions

1. **Unique 1D metal - semiconductor - metal junctions**:
- The authors discovered this unique 1D metal - semiconductor - metal junction, which is entirely composed of graphene, through angle - resolved photoemission spectroscopy (ARPES).
- This junction is achieved by growing graphene on pre - patterned SiC steps, thereby generating local strain.

2. **Precise width control**:
- The width of the semiconductor graphene ribbons can be precisely controlled within a few graphene lattice constants, which is far beyond the limits of modern lithography techniques.

3. **Stable electronic band structure**:
- This structure exhibits a highly consistent electronic band structure, with very little change even over a length range of tens of micrometers.

4. **Wide - band - gap characteristics**:
- The semiconductor graphene ribbons have an energy band gap greater than 0.5 eV in a few - nanometer - wide area, which is suitable for electronic device applications at room temperature.

5. **Seamless connection**:
- The semiconductor graphene ribbons are seamlessly connected to the metallic graphene sheets on both sides, forming a complete metal - semiconductor - metal structure.

### Conclusion

This research shows how to change the electronic structure of graphene by controlling the geometry of the SiC substrate, thereby achieving large - scale scalable manufacturing of semiconductor graphene nanostructures. This method not only solves the "band - gap problem" of graphene but also paves a new direction for future graphene electronics research.