Abstract:A blueprint for producing scalable digital graphene electronics has remained elusive. Current methods to produce semiconducting-metallic graphene networks all suffer from either stringent lithographic demands that prevent reproducibility, process-induced disorder in the graphene, or scalability issues. Using angle resolved photoemission, we have discovered a unique one dimensional metallic-semiconducting-metallic junction made entirely from graphene, and produced without chemical functionalization or finite size patterning. The junction is produced by taking advantage of the inherent, atomically ordered, substrate-graphene interaction when it is grown on SiC, in this case when graphene is forced to grow over patterned SiC steps. This scalable bottomup approach allows us to produce a semiconducting graphene strip whose width is precisely defined within a few graphene lattice constants, a level of precision entirely outside modern lithographic limits. The architecture demonstrated in this work is so robust that variations in the average electronic band structure of thousands of these patterned ribbons have little variation over length scales tens of microns long. The semiconducting graphene has a topologically defined few nanometer wide region with an energy gap greater than 0.5 eV in an otherwise continuous metallic graphene sheet. This work demonstrates how the graphene-substrate interaction can be used as a powerful tool to scalably modify graphene's electronic structure and opens a new direction in graphene electronics research.

Wide-band-gap Wrinkled Nanoribbon-Like Structures in a Continuous Metallic Graphene Sheet

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

A wide band gap metal-semiconductor-metal nanostructure made entirely from graphene

Band-Gap Engineering with Hybrid Graphane−Graphene Nanoribbons

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography.

Energy Band Gap Engineering of Graphene Nanoribbons

Nanomanufacturing of Graphene Nanosheets Through Nano-Hole Opening and Closing

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Knitted Graphene-Nanoribbon Sheet: a Mechanically Robust Structure.

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

A molecular dynamics investigation of the mechanical properties of graphene nanochains

Mechanical Manipulations on Electronic Transport of Graphene Nanoribbons

Wrinkle Engineering: A New Approach to Massive Graphene Nanoribbon Arrays

<i>In situ</i> triggering metallicity in 3D graphene via constructing wrinkle configuration

Gap engineering in strained fold-like armchair graphene nanoribbons

Energy Gaps of Atomically Precise Armchair Graphene Sidewall Nanoribbons

Realizing One-dimensional Metallic States in Graphene via Periodically Coupled Zeroth Pseudo-Landau Levels

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Band engineering and elastic properties of strained armchair graphene nanoribbons: semiconductor vs metallic characteristics