Abstract:The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nano-ribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunneling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.

Large Bandgap of Pressurized Trilayer Graphene

The Possibility of Chemically Inert, Graphene-Based All-Carbon Electronic Devices with 0.8 Ev Gap

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

Interfacial engineering in graphene bandgap

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene - Escholarship

Tunable and Sizable Band Gap of Single Layer Graphene Sandwiched Between Hexagonal Boron Nitride

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Band gap and correlated phenomena in bilayer and trilayer graphene

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Contrastive band gap engineering of strained graphyne nanoribbons with armchair and zigzag edges

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Direct observation of a widely tunable bandgap in bilayer graphene

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Substrates, electron-phonon interactions and the modification of graphene band gaps

Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices

Semiconducting Graphene on Silicon from First-Principles Calculations

Substrate-induced band gap opening in epitaxial graphene

Substrate-induced bandgap opening in epitaxial graphene

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact