Multivariate growth analysis on D019-phase Mn3Ga kagome-based topological antiferromagnets

Wei-Chih Chang,Anqi Cheng,Yangjun Gao,Feiya Xu,Xu Li,Yaping Wu,Zhiming Wu,Junyong Kang
DOI: https://doi.org/10.1088/1361-648X/ad81a4
2024-10-23
Abstract:The combination of antiferromagnetism and topological properties in Mn3X (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of Mn3Ga thin films on SiO2(001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick Mn3Ga films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) Mn3Ga(002) phase from the relatively thin Mn3Ga films after annealing at 773 K. The investigation of the growth mechanism of Mn3Ga polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.
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