Anisotropic anomalous transport in the kagome-based topological antiferromagnetic epitaxial thin films

M. Raju,Ralph Romero,Daisuke Nishio-Hamane,Ryota Uesugi,Mihiro Asakura,Zhenisbek Tagay,Tomoya Higo,N. P. Armitage,Collin Broholm,Satoru Nakatsuji
DOI: https://doi.org/10.1103/physrevmaterials.8.014204
IF: 3.98
2024-01-27
Physical Review Materials
Abstract:Mn3X ( X=Sn , Ge, Ga) kagome Weyl semimetals have attracted significant research interest due to their large anomalous Hall, thermal, and optical effects originating from their nontrivial band topology. These large topological effects together with the antichiral antiferromagnetic order that can be manipulated through various experimental means provide unique platforms for developing high-speed spintronics. Mn3Ga is known to have the largest Néel temperature ( TN≈480 K), which is useful for developing antiferromagnetic spintronics. Here, we establish the epitaxial growth of antiferromagnetic Mn3Ga films by magnetron sputtering and present their structure, magnetotransport, terahertz properties, and exchange bias effect in Mn3Ga /NiFe bilayers, establishing their remarkable properties essential for future investigations towards device applications. Received 26 August 2023 Accepted 2 January 2024 ©2024 American Physical Society Physics Subject Headings (PhySH) Research Areas MagnetotransportTopological materials Condensed Matter, Materials & Applied Physics
materials science, multidisciplinary
What problem does this paper attempt to address?