[Results of experimental and clinical trials of moxonidine presented at the 8th-10th European Hypertension Conferences].

O. Ostroumova,V. I. Mamaev,V. V. Konovalova,I. A. Kuz’michev

Abstract:

What problem does this paper attempt to address?

Computational investigation of the electronic and optical properties of planar Ga-doped Graphene

Nicole Creange,Costel Constantin,Jian-Xin Zhu,Alexander V. Balatsky,Jason. T. Haraldsen

DOI: https://doi.org/10.48550/arXiv.1506.01324

2015-06-04

Abstract:We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simlutate the electronic band structure and show the effects of impurity doping (0-3.91\%) in graphene on the electron density, refractive index, optical conductivity, and extinction coefficient for each doping percentages. Here, gallium atoms are placed randomly (using a 5-point average) throughout a 128-atom sheet of graphene. These calculations demonstrate the effects of hole doping due to direct atomic substitution, where it is found that a disruption in the electronic structure and electron density for small doping levels is due to impurity scattering of the electrons. However, the system continues to produce metallic or semi-metallic behavior with increasing doping levels. These calculations are compared to a purely theoretical 100\% Ga sheet for comparison of conductivity. Furthermore, we examine the change in the electronic band structure, where the introduction of gallium electronic bands produces a shift in the electron bands and dissolves the characteristic Dirac cone within graphene, which leads to better electron mobility.

Materials Science,Mesoscale and Nanoscale Physics,Other Condensed Matter
Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Yu Gao,Xiaodong Pi,Xunhai Wang,Tianhao Yuan,Qingjun Jiang,Ryan Gresback,Jianguo Lu,Deren Yang

DOI: https://doi.org/10.1002/ppsc.201600016

IF: 3.467

2016-01-01

Particle & Particle Systems Characterization

Abstract:The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.
Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Y. Lambert,Y. Gao,X.D. Pi,B. Grandidier,D. Stiévenard

DOI: https://doi.org/10.1016/j.physe.2017.05.018

2017-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of ~15% is found for the incorporated P impurities in the NCs.
Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Pengfei Lv,Jose Angel Silva-Guillen,Alexander N. Rudenko,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevb.105.094111

2022-01-01

Abstract:The synthesis of germanene on semiconducting substrates such as MoS2 has revealed that it exhibits a V-shaped density of states around the Fermi level, indicating the presence of Dirac electrons. Further experiments demonstrated that charge inhomogeneities of germanene on MoS2 appear as n- and p-type doped regions, the origin of which is not well understood. In this paper, by means of density functional theory calculations, we study germanene deposited on MoS2 considering various defect types and a variety of stacking configurations. We find that some native defects typical to MoS2 samples lead to the charge transfer between germanene and MoS2. Unlike vacancies and antisite defects, substitution of molybdenum by group IV-V and VII transition metal atoms does not lead to any midgap states, and appears as a plausible explanation for the experimentally observed charge puddles. Our results shed light on the mechanism of breaking the charge neutrality in Dirac materials without altering their electronic properties, which could be important for the realization of lateral p-n junctions based on two-dimensional materials.
Novel Penta-GeC 5 Nanosheet as Potential candidate for Efficient Thermoelectric Application: A DFT approach

Dhara Raval,Elie A. Moujaes,Sanjeev K. Gupta,P.N. Gajjar

DOI: https://doi.org/10.1016/j.jpcs.2024.112157

IF: 4.383

2024-06-21

Journal of Physics and Chemistry of Solids

Abstract:Under the framework of density functional theory, we systematically explore the geometric, electronic, transport, and thermal properties of a novel 2D pentagonal monolayer of GeC 5 . Our calculations show that the structure is dynamically and mechanically stable. Simulated results indicate that the predicted monolayer is an indirect semiconductor with a band gap of 1.77 eV. Using the Bardeen and Shockley formula, the carrier mobility of the electrons is found to be 824.41 cm 2 V -1 S -1 , while that of holes registers a more significant value of 4433.84 cm 2 V -1 S -1 . The lattice thermal conductivity for the undoped system was calculated using the Slack model, recording values of 13.46 W/ (m.K), 6.73 W/ (m.K), and 4.49 W/ (m.K) at 300K, 600K, and 900K, respectively. In the case of electron doping, the figure of merit (ZT) is only significant along the x-direction. ZT reaches a maximum value of 2.97 at T=300K for an energy of 0.79 eV above the Fermi level. Hole doping, however, does not lead to exciting results due to the shallow ZT values. All reported results are vacuum-free, enabling an accurate and direct comparison with experimental data whenever available. The obtained electronic properties suggest that the penta-GeC 5 monolayer is a promising candidate for new electronic device applications. Additionally, when appropriately doped, the figure of merit of penta-GeC 5 is expected to increase with temperature, thus making it a key ingredient in producing thermoelectric devices on the nanoscale.

physics, condensed matter,chemistry, multidisciplinary
Chemical characterization of a novel peptide from the neuroendocrine light yellow cells of Lymnaea stagnalis.

R. Hoek,K. W. Li,J. van Minnen,W. Geraerts

DOI: https://doi.org/10.1016/0169-328X(92)90195-H

1992-11-01

Abstract:
Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Mahdieh Yousefi,Monireh Faraji,Reza Asgari,Alireza Z. Moshfegh

DOI: https://doi.org/10.1103/PhysRevB.97.195428

2018-06-04

Abstract:We study the effect of boron (B) and Phosphorous (P) co-doping on electronic and optical properties of graphitic carbon nitride (g-C$_3$N$_4$ or GCN) monolayer using density functional simulations. The energy band structure indicates that the incorporation of B and P into a hexagonal lattice of GCN reduces the energy band gap from $3.1$ for pristine GCN to $1.9$ eV, thus extending light absorption toward the visible region. Moreover, on the basis of calculating absorption spectra and dielectric function, the co-doped system exhibits an improved absorption intensity in the visible region and more electronic transitions, which named $\pi^*$ electronic transitions that occurred and were prohibited in the pristine GCN. These transitions can be attributed to charge redistribution upon doping, caused by distorted configurable B/P co-doped GCN confirmed by both electron density and Mulliken charge population. Therefore, B/P co-doped GCN is expected to be an auspicious candidate to be used as a promising photoelectrode in Photoelectrochemical water splitting reactions leading to efficient solar H$_2$ production.

Materials Science,Mesoscale and Nanoscale Physics
Electric and thermoelectric properties of graphene bilayers with extrinsic impurities under applied electric field

G. A. Namnes,T. L. Mitran,A. Manolescu,Daniela Dragoman

DOI: https://doi.org/10.48550/arXiv.1812.08672

2019-02-22

Abstract:In contrast to monolayer graphene, in bilayer graphene (BLG) one can induce a tunable bandgap by applying an external electric field, which makes it suitable for field effect applications. Extrinsic doping of BLGs enriches the electronic properties of the graphene-based family, as their behavior can be switched from an intrinsic small-gap semiconductor to a degenerate semiconductor. In the framework of density functional theory (DFT) calculations, we investigate the electronic and thermoelectric properties of BLGs doped with extrinsic impurities from groups III (B, Al, Ga), IV (Si, Ge) and V (N, P, As), in the context of applied external electric fields. Doping one monolayer of the BLG with p- or n-type dopants results in a degenerate semiconductor, where the Fermi energy depends on the type of the impurity, but also on the magnitude and orientation of the electric field, which modifies the effective doping concentration. Doping one layer with isoelectronic species like Si and Ge opens a gap, which may be closed upon applying an electric field, in contrast to the pristine BLG. Furthermore, dual doping by III-V elements, in a way that the BLG system is formed by one n-type and one p-type graphene monolayer, leads to intrinsic semiconductor properties with relatively large energy gaps. Si-Si and Ge-Ge substitutions render a metallic like behavior at zero field similar to the standard BLG, however with an asymmetric density of states in the vicinity of the Fermi energy. We analyze the suitability of the highly doped BLG materials for thermoelectric applications, exploiting the large asymmetries of the density of states. In addition, a sign change in the Seebeck coefficient is observed by tuning the electric field as a signature of narrow bands near the Fermi level.

Mesoscale and Nanoscale Physics,Materials Science
Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure

M. Goudarzi,J. Karamdel,H. Hassanabadi,Sh. Zorriasatein

DOI: https://doi.org/10.1142/s0217984924502154

2024-02-15

Modern Physics Letters B

Abstract:Modern Physics Letters B, Ahead of Print. Using density functional theory and Boltzmann equations, this study calculates and compares the electronic, optical, thermoelectric, and thermodynamic properties of bulk and single-layer germanium carbide structures. It has been shown that germanium carbide in the bulk structure has an indirect energy band gap of 1.61[math]eV. In a single layer structure, it is a metal. Thermodynamic properties including specific heat at constant volume have been investigated using the quasi-harmonic approximation (QHA) package in QE. According to the studies conducted on optical properties, this material shows good reflection in the visible region. In addition, this structure has high electrical conductivity and low thermal conductivity, which is essential for thermoelectric materials. Thermoelectric calculations using semi-classical Boltzmann transfer theory show that the performance of two-dimensional compounds with graphene gives good thermoelectric results. At 100[math]K, the highest figure of merit (ZT) for GeC is 1.00. Our findings evaluate the GeC compound as a suitable thermoelectric material in the temperature gradient from 100 to 900[math]K.

physics, condensed matter, applied, mathematical
Doping of large-pore crown graphene nanomesh

Mohamed S. Eldeeb,Mohamed M. Fadlallah,Glenn J. Martyna,Ahmed A. Maarouf

DOI: https://doi.org/10.1016/j.carbon.2018.03.048

2022-06-30

Abstract:Porous graphene structures, also termed graphene nanomeshes (GNMs), are garnering increasing interest due to their potential application to important technologies such as chemical sensing, ion-filtration, and nanoelectronics. Semiconducting GNMs designed to have fractional eV band gaps are good candidates for graphene-based electronics, provided that a mechanism for their stable and controlled doping is developed. Recent work has shown that controlled passivation of the edges of subnanometer pores and subsequent doping by atoms or molecules gives rise to {\it p}- and {\it n}-doped GNM structures. However, these structures are difficult to fabricate at the nanoscale. Here, we use first principle calculations to study the effect of the pore size on the doping physics of GNM structures with larger pores that can potentially host more than a single dopant. We show that such doping mechanism is effective even for pores with relatively large radii. We also study the effect of the number of dopants per pore on doping stability. We find that stable rigid band {\it n}- and {\it p}-doping emerges in such structures even if the dopants form a nano-cluster in the pore - rigid band doping is achieved in all {\it n}- and {\it p}-doping studied. Such doped large-pore GNM structures have potential applications as field effect transistors, and as transparent conducting electrodes.

Materials Science
Influence of gadolinium doping on structural, optical, and electronic properties of polymeric graphitic carbon nitride

Ganesh Kesavan,Dan C. Sorescu,Raihan Ahamed,Krishnan Damodaran,Scott E. Crawford,Faezeh Askari,Alexander Star

DOI: https://doi.org/10.1039/d4ra03437f

IF: 4.036

2024-07-25

RSC Advances

Abstract:Polymeric graphitic carbon nitride (gCN) materials have received great attention in the fields of photo and electrocatalysis due to their distinct properties in metal-free systems with high physicochemical stability. Nevertheless, the activity of undoped gCN is limited due to its relatively low specific surface area, low conductivity, and poor dispersibility. Doping Gd atoms in a gCN matrix is an efficient strategy to fine-tune its catalytic activity and its electronic structure. Herein, the influence of various wt% of gadolinium (Gd) doped in melon-type carbon nitride was systematically investigated. Gadolinium-doped graphitic carbon nitride (GdgCN) was synthesized by adding gadolinium nitrate to dicyandiamide during polymerization. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results revealed that the crystallinity and the morphological properties are influenced by the % of Gd doping. Furthermore, X-ray photoelectron spectroscopy (XPS) studies revealed that the gadolinium ions bonded with nitrogen atoms. Complementary density functional theory (DFT) calculations illustrate possible bonding configurations of Gd ions both in bulk material and on ultrathin melon layers and provide evidence for the corresponding bandgap modifications induced by gadolinium doping.

chemistry, multidisciplinary
Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

Zhenyi Ni,Hui Jia,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1039/c7ra09008k

IF: 4.036

2017-01-01

RSC Advances

Abstract:Doping is a crucial way of tuning the properties of semiconductor quantum dots (QDs). As one type of important semiconductor QDs, germanium (Ge) QDs have been recently doped with boron (B) and phosphorus (P) through a gas-phase synthesis approach successfully. However, theoretical understanding about the structural and electronic properties of doped Ge QDs remains rather limited. Here we investigate the doping of Ge QDs with B and P in the framework of density functional theory. The formation energies and electronic structures of singularly B-or P-doped Ge QDs and B/P-codoped Ge QDs are systematically studied. It is found that both B and P prefer the near-surface region of Ge QDs. The electronic structures of Ge QDs can be effectively tuned by B and P doping. The B/P codoping may facilitate the incorporation of B and P into Ge QDs, resulting in the further modification of the electronic structures of Ge QDs.
On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Jan Vanhellemont,Xinpeng Zhang,Wubing Xu,Jiahe Chen,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.3503154

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:The assumed impact of Ge doping on void formation during Czochralski-growth of silicon single crystals, is studied using scanning infrared microscopy. It has been reported that Ge doping leads to a reduction in the flow pattern defect density and of the crystal originated particle size, both suggesting an effect of Ge on vacancy concentration and void formation during crystal growth. The present study however reveals only a marginal-if any-effect of Ge doping on grown-in single void size and density. Double and multiple void formation might however be suppressed partially by Ge doping leading to the observed decrease in flow pattern defect density. The limited effect of Ge doping on single void formation is in agreement with earlier findings that Ge atoms are only a weak trap for vacancies at higher temperatures and therefor should have a smaller impact on the vacancy thermal equilibrium concentration and on single void nucleation than, e.g., interstitial oxygen and nitrogen.
Theoretical characterization of germanene doped with main group elements.

Pablo Andres Denis,Jose Laranjeira,Julio Sambrano

DOI: https://doi.org/10.1002/cphc.202400139

IF: 3.52

2024-03-26

ChemPhysChem

Abstract:Herein, using density functional calculations, we studied the substitutional doping in germanene with B, C, N, O, Al, Si, P, S, Ga, As, and Se. Nitrogen is the element that can be more easily incorporated into the germanene lattice, followed by silicon, carbon, and boron. Almost all dopants were efficient in opening a band‐gap. Yet, caution should be taken because this opening strongly depends on the dopant concentration. Carbon and sulfur were the most effective elements for band‐gap opening. C‐doping generates the lowest effective masses (me*/m0=mh*/m0=0.09). The equal me and mh values indicate an intrinsic semiconductor behavior, a characteristic shared by the chalcogenides‐doped systems. Additionally, we performed a detailed analysis of the preferred disposition of dopants in the germanene lattice. In contrast with the results obtained for graphene, when multiple atoms are introduced in the germanene framework, they do not prefer to be agglomerated, adopting a random disposition, except in the case of sulfur and nitrogen, which favored specific dopant arrangement. Two sulfur dopants showed a notorious preference for replacing a Ge‐Ge bond but without forming an S‐S linkage, thus adopting a thiophene‐like structure that may impart germanene exciting properties, as observed for S and N codoped graphene.

chemistry, physical,physics, atomic, molecular & chemical
Electronic and optical properties of Germagraphene, a direct band-gap semiconductor

Sujoy Datta,Debnarayan Jana,Chhanda Basu Chaudhuri,Abhijit Mookerjee

DOI: https://doi.org/10.48550/arXiv.1907.00546

2019-07-01

Computational Physics

Abstract:In this communication, we report a theoretical attempt to understand the electronic and optical properties of germagraphene, a two-dimensional graphene analogue. We study two different structures, C$_{17}$Ge and C$_{16}$Ge. In the C$_{17}$Ge structure, a germanium atom replaces a carbon atom while in C$_{16}$Ge structure, a carbon-carbon bond is replaced by a single germanium atom. These two types of doping have been experimentally made possible by Tripathi \etal [{\it{ACS Nano (2018) 1254641-4647}}]. We find that C$_{16}$Ge has a planar structure, whereas, the Ge atom in C$_{17}$Ge settles in an out-of-the plane position, resulting in a buckled structure. Due to Ge doping, the band-gaps open up in both. The 1.227 eV direct gap of C$_{17}$Ge is ideal for effective light absorbance and optoelectronic devices. Further study of optical properties supports this claim as well.
Germanium‐Carbdiyne: A 3D Well‐Defined sp‐Hybridized Carbon‐Based Material with Superhigh Li Storage Property

Ze Yang,Xin Ren,Yuwei Song,Xiaodong Li,Chunfang Zhang,Xiuli Hu,Jianjiang He,Jiazhu Li,Changshui Huang

DOI: https://doi.org/10.1002/eem2.12269

2022-03-09

Abstract:Carbyne delivers various excellent properties for the existence of the larger number of sp-hybridized carbon atoms. Here, a three-dimensional (3D) well-defined porous carbon material germanium-carbdiyne (Ge-CDY) which is comprised of only sp-hybridized carbon atoms bridging by Ge atoms has been developed and investigated. The unique diamond-like structure constructed by linear butadiyne bonds and sp3-hybridized Ge atoms ensures the stability of Ge-CDY. The large percentage of conjugated alkyne bonds composed by sp-C guarantees the good conductivity and the low band gap, which were further confirmed in experimentally and theoretically, endowing Ge-CDY with the potential in electrochemical applications. The well-defined 3D carbon skeleton of Ge-CDY provides abundant uniform nanopores, which is suitable for metal ions storage and diffusion. Further half-cell evaluation also demonstrated Ge-CDY exhibited an excellent performance in lithium storage. All those indicating sp-hybridized carbon-based materials can exhibit great potential to possess excellent properties and be applied in the field of energy, electronic, and so on.

materials science, multidisciplinary
Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Shuang Guo,Yunfeng Wang,Xiaolong Zhang,Bao Wang,Jinzhong Zhang

DOI: https://doi.org/10.1016/j.matlet.2022.133199

IF: 3

2022-12-15

Materials Letters

Abstract:The nitrogen (N) doping effect on crystal structure, optical band gap, and localized states for amorphous/crystalline GeTe films was studied. The crystallization temperature and sheet resistance were improved by N doping. The local bonding structure of amorphous and crystalline Nx(GeTe)1-x was elucidated by Raman spectra. The changes in optical band gap and localized states density for the films were evaluated by transmittance spectra. The band gap broadening after N doping is crucial to reducing the threshold current for phase change memory.

materials science, multidisciplinary,physics, applied
Theoretical Study on Electronic, Magnetic and Optical Properties of Non-Metal Atoms Adsorbed onto Germanium Carbide

Lin Zhang,Zhen Cui

DOI: https://doi.org/10.3390/nano12101712

IF: 5.3

2022-05-17

Nanomaterials

Abstract:Nine kinds of non-metal atoms adsorbed into germanium carbide (NM-GeC) systems wereare investigated by first-principles calculations. The results show that the most stable adsorption positions vary with the NM atoms, and C-GeC exhibits the strongest adsorption. The adsorption of NM atoms causes changes in the electronic, optical and magnetic properties of the GeC system. F- and Cl-GeC turn into magnetic metals, P-GeC becomes a half-metal and H- and B-GeC appear as non-magnetic metals. Although C- and O-GeC remain non-magnetic semiconductors, N-GeC presents the behaviors of a magnetic semiconductor. Work function decreases in H-, B- and N-SiC, reaching a minimum of 3.37 eV in H-GeC, which is 78.9% of the pristine GeC. In the visible light region, redshifts occur in the absorption spectrum of C-GeC , with strong absorption in the wavelength range from 400 to 600 nm. Our analysis shows that the magnetism in semiconducting NM-GeC is attributed to the spinning state of the unbonded electrons of the NM atoms. Our study demonstrates the applications of NM-GeC in spintronics, optoelectronics and photovoltaic cells, and it provides a reference for analyzing magnetism in semiconducting NM materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
N-, B-, P-, Al-, As-, Ga-graphdiyne/graphyne lattices: First-principles investigation of mechanical, optical and electronic properties

B. Mortazavi,M. Shahrokhi,M. E. Madjet,T. Hussain,X. Zhuang,T. Rabczuk

DOI: https://doi.org/10.1039/C9TC00082H

2019-02-06

Abstract:Graphdiyne and graphyne are carbon-based two-dimensional (2D) porous atomic lattices, with outstanding physics and excellent application prospects for advanced technologies, like nanoelectronics and energy storage systems. During the last year, B- and N-graphdiyne nanomembranes were experimentally realized. Motivated by the latest experimental advances, in this work we predicted novel N-, B-, P-, Al-, As-, Ga-graphdiyne/graphyne 2D lattices. We then conducted density functional theory simulations to obtain the energy minimized structures and explore the mechanical, thermal stability, electronic and optical characteristics of these novel porous nanosheets. Acquired theoretical results reveal that the predicted carbon-based lattices are thermally stable. It was moreover found that these novel 2D nanostructures can exhibit remarkably high tensile strengths or stretchability. The electronic structure analysis reveals semiconducting electronic character for the predicted monolayers. Moreover, the optical results indicate that the first absorption peaks of the imaginary part of the dielectric function for these novel porous lattices along the in-plane directions are in the visible, IR and near-IR (NIR) range of light. This work highlights the outstanding properties of graphdiyne/graphyne lattices and recommends them as promising candidates to design stretchable energy storage and nanoelectronics systems.

Computational Physics,Materials Science
Structural characterization of nitrogen-doped γ -graphynes by computational X-ray spectroscopy

Bing-Bing Zhang,Jing Ming,Hao-Qing Li,Xiu-Neng Song,Chuan-Kui Wang,Weijie Hua,Yong Ma

DOI: https://doi.org/10.1016/j.carbon.2023.118301

IF: 10.9

2023-10-01

Carbon

Abstract:Heterogeneous atomic doping, especially with nitrogens, can improve the interfacial properties and electrical conductivity of carbon-based materials like γ -graphyne ( γ -GY), thereby improving the energy storage capacity and expanding various electrical applications. Properties of doped structures are affected by the local structures around the impurity atoms, which can be sensitively determined by the X-ray photoelectron (XPS) and near-edge X-ray absorption fine-structure (NEXAFS) spectra. In the present work, we have simulated the XPS and NEXAFS spectra of pristine γ -GY as well as five nitrogen-doped γ -GYs in both the C and N K-edges with the density functional theory. The theoretical C and N 1s ionic potentials of the N-doped systems can be well fitted to the experimentally XPS spectra, which can accurately characterize the experimental peaks. These five N-doped γ -GYs can be well distinguished by NEXAFS. Our results provide clear local structure-spectroscopy relation and a theoretical reference for identifying different N-doped γ -GYs, which are also insightful for general two-dimensional carbon-based materials.

materials science, multidisciplinary,chemistry, physical

[Results of experimental and clinical trials of moxonidine presented at the 8th-10th European Hypertension Conferences].

Computational investigation of the electronic and optical properties of planar Ga-doped Graphene

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Novel Penta-GeC 5 Nanosheet as Potential candidate for Efficient Thermoelectric Application: A DFT approach

Chemical characterization of a novel peptide from the neuroendocrine light yellow cells of Lymnaea stagnalis.

Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Electric and thermoelectric properties of graphene bilayers with extrinsic impurities under applied electric field

Study of electronic, optical, thermodynamic, and thermoelectric properties of GeC bulk and monolayer structure

Doping of large-pore crown graphene nanomesh

Influence of gadolinium doping on structural, optical, and electronic properties of polymeric graphitic carbon nitride

Density Functional Theory Study on the Boron and Phosphorus Doping of Germanium Quantum Dots

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Theoretical characterization of germanene doped with main group elements.

Electronic and optical properties of Germagraphene, a direct band-gap semiconductor

Germanium‐Carbdiyne: A 3D Well‐Defined sp‐Hybridized Carbon‐Based Material with Superhigh Li Storage Property

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Theoretical Study on Electronic, Magnetic and Optical Properties of Non-Metal Atoms Adsorbed onto Germanium Carbide

N-, B-, P-, Al-, As-, Ga-graphdiyne/graphyne lattices: First-principles investigation of mechanical, optical and electronic properties

Structural characterization of nitrogen-doped γ -graphynes by computational X-ray spectroscopy