[Studies on the electrophoretic demonstration of isoenzymes of esterases and phosphatases in dermatophytes].

W. Meinhof,S. Marghescu

Abstract:

What problem does this paper attempt to address?

Dendritic CsSnI 3 for Efficient and Flexible Near‐Infrared Perovskite Light‐Emitting Diodes

Jianxun Lu,Xiang Guan,Yuqing Li,Kebin Lin,Wenjing Feng,Yaping Zhao,Chuanzhong Yan,Mingliang Li,Yueyue Shen,Xiangqian Qin,Zhanhua Wei

DOI: https://doi.org/10.1002/adma.202104414

IF: 29.4

2021-09-16

Advanced Materials

Abstract:All-inorganic and lead-free CsSnI3 is emerging as one of the most promising candidates for near-infrared perovskite light-emitting diodes (NIR Pero-LEDs), which find practical applications including facial recognition, biomedical apparatus, night vision camera, and Light Fidelity. However, in the CsSnI3-based Pero-LEDs, the holes injection is significantly higher than that of electrons, resulting in unbalanced charge injection, undesired exciton dissipation, and poor device performance. Herein, it is proposed to manage charge injection and recombination behavior by tuning the interface area of perovskite and charge-transporter. A dendritic CsSnI3 structure is prepared on the hole-transporter, only making a bottom contact with the hole-transporter and exposing all other available crystal surfaces to the electron-transporter. In other words, the interface area of perovskite/electron-transporter is significantly higher than that of perovskite/hole-transporter. Moreover, the embedding interface of perovskite/electron-transporter can spatially confine holes and electrons, increasing the radiation recombination. By taking advantage of the dendritic structure, efficient lead-free NIR Pero-LEDs are achieved with a record external quantum efficiency (EQE) of 5.4%. More importantly, the dendritic structure shows great superiorities in flexible devices, for there is almost no morphology change after 2000-cycles of bends, and the fabricated Pero-LEDs can keep 93.4% of initial EQEs after 50-cycles of bends.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ultrasmall Blueshift of Near-Infrared Fluorescence in Phase-Stable Cs2SnI6 Thin Films

Ripeng Luo,Siwei Zhang,Shichao Zhao,Jingzhou Li,Feiyu Kang,Kuang Yu,Guodan Wei

DOI: https://doi.org/10.1103/physrevapplied.14.014048

IF: 4.6

2020-01-01

Physical Review Applied

Abstract:Cubic Cs2SnI6 perovskite is considered to be an ideal lead-free and air-stable alternative to traditional APbX(3) [A = Cs, K, CH3NH3, CH(NH2)(2)] perovskites for optoelectronic applications, such as solar cells and photodetectors. Herein, both experiments and theoretical calculations are carried out to study the lattice dynamics and temperature dependences of band gaps. Using Raman spectroscopy, we show that the obtained Cs2SnI6 film maintains a long-range crystalline structure of the cubic phase within 77-300 K, which is further confirmed via lattice dynamics calculations based on density functional theory (DFT). An ultrasmall net blueshift of 0.035 eV deduced from its temperature-dependent photoluminescence (PL) spectrum is observed as the temperature increases from 103 to 300 K, making it an ideal material for optoelectronic devices. Notably, this blueshift of the Cs2SnI6 film is significantly smaller than that of the DFT-calculated band-gap shift (similar to 0.085 eV) based on thermal expansion theory. This deviation is attributed to the strong phonon-electron (ph-e) interaction inherently occurring in Cs2SnI6 material, which counterbalances the thermal expansion effects. We further evaluate the magnitude of the ph-e interaction by fitting the full width at half maximum (FWHM) of the PL spectrum. The fitted Huang-Rhys factor (S) of 4.9 is consistent with reduced electronic dimensionality and increased vibrational degree of freedom, indicating stronger ph-e coupling strength in the Cs2SnI6 film compared with regular APbX(3)-type perovskites (S < 3.3). Adopting both thermal expansion and ph-e coupling effects, the ultrasmall band-gap shift is theoretically calculated and is in good agreement with the experimental blueshift of the band gap. In summary, our work illustrates the solid structural stability of Cs2SnI6 in both lattice and electronic structures, paving the way for the next generation of optoelectronic devices.
Suppressing Disproportionation Decomposition in Sn-Based Perovskite Light-Emitting Diodes

Xiang Guan,Jianxun Lu,Qi Wei,Yuqing Li,Yuanyuan Meng,Kebin Lin,Yaping Zhao,Wenjing Feng,Kaikai Liu,Guichuan Xing,Zhanhua Wei

DOI: https://doi.org/10.1021/acsenergylett.2c02822

IF: 22

2023-02-24

ACS Energy Letters

Abstract:Nontoxic Sn-based perovskite light-emitting diodes (Pero-LEDs) have been developing rapidly in recent years. However, high-quality Sn-based perovskite films are hardly prepared because of the heavy self-doping of Sn4+ in the as-prepared films. Most previous reports indicate that the Sn4+ formation is mainly attributed to the Sn2+ oxidation by external oxidizers. Here, for the first time, we reveal that the disproportionation decomposition of Sn2+ during the annealing process plays a critical role in degrading device performance. To resolve this issue, we introduced formamidine thiocyanate into the perovskite precursor as a thermal-sacrificial agent to alleviate the disproportionation decomposition. Finally, we achieved efficient Pero-LEDs with a maximum external quantum efficiency of 5.3% and ultralow efficiency roll-off. This work provides a view of understanding the instability of Sn-based perovskite and presents a practical method to achieve efficient Sn-based Pero-LEDs by suppressing the disproportionation decomposition of Sn2+.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
Switchable interfacial reaction enables bright and stable deep-red perovskite light-emitting diodes

Jiejun Zeng,Xiaoyue Sun,Yang Liu,Wangxiao Jin,Siyu He,Xitong Zhu,Kai Niu,Guolong Sun,Jinyi Li,Haiping He,Tulai Sun,Zhizhen Ye,Yizheng Jin

DOI: https://doi.org/10.1038/s41566-023-01369-9

IF: 35

2024-01-10

Nature Photonics

Abstract:High-performance deep-red light-emitting diodes (LEDs) are important for biomedical and agricultural applications. However, the development of bright and stable solution-processed deep-red LEDs remains challenging. Here we design a switchable interfacial deprotonation reaction between the perovskite and electron-transporting layer to fabricate high-quality CsPbI 3 perovskite films, leading to stable and bright deep-red LEDs. Our approach starts with a precursor solution containing guanidine hydroiodide and a layer of alkaline zinc hydroxide. On annealing, the interfacial reaction is switched on, leading to the formation of high-quality CsPbI 3 . The alkaline zinc hydroxide layer is simultaneously converted in situ to alkalescent ZnO, which prevents the formation of the undesirable yellow-phase CsPbI 3 perovskite. As a result, our perovskite LEDs based on CsPbI 3 demonstrate a long half-lifetime of approximately 33.6 h under a driving current density of 100 mA cm –2 and an exceptionally high radiance of around 1,980 W sr −1 m –2 . Moreover, by partly substituting iodide with bromide, we achieve bright deep-red perovskite LEDs with an emission wavelength of 691 nm and an operational half-lifetime of 50.3 h at 100 mA cm –2 .

optics,physics, applied
Alkalis-doping of mixed tin-lead perovskites for efficient near-infrared light-emitting diodes

Huanqin Yu,Wenjing Chen,Zhibin Fang,Liming Ding,Bingqiang Cao,Zhengguo Xiao

DOI: https://doi.org/10.1016/j.scib.2021.07.021

IF: 18.9

2022-01-01

Science Bulletin

Abstract:Substitution of lead (Pb) with tin (Sn) is a very important way to reduce the bandgap of metal halide perovskite for applications in solar cells, and near infrared (NIR) light-emitting diodes (LEDs), etc. However, mixed Pb/Sn perovskite becomes very disordered with high trap density when the Sn molar ratio is less than 20%. This limits the applications of mixed Pb/Sn perovskites in optoelectronic devices such as wavelength tunable NIR perovskite LEDs (PeLEDs). In this work, we demonstrate that alkali cations doping can release the microstrain and passivate the traps in mixed Pb/Sn perovskites with Sn molar ratios of less than 20%, leading to higher carrier lifetime and photoluminescence quantum yield (PLQY). The external quantum efficiency (EQE) of Sn0.2Pb0.8-based NIR PeLEDs is dramatically enhanced from 0.1% to a record value of 9.6% (emission wavelength: 868 nm). This work provides a way of making high quality mixed Pb/Sn optoelectronic devices with small Sn molar ratios.

multidisciplinary sciences
Planar defect–free pure red perovskite light-emitting diodes via metastable phase crystallization

Yong-Hui Song,Jing Ge,Li-Bo Mao,Kun-Hua Wang,Xiao-Lin Tai,Qian Zhang,Le Tang,Jing-Ming Hao,Ji-Song Yao,Jing-Jing Wang,Tao Ma,Jun-Nan Yang,Yi-Feng Lan,Xue-Chen Ru,Li-Zhe Feng,Guozhen Zhang,Yue Lin,Qun Zhang,Hong-Bin Yao

DOI: https://doi.org/10.1126/sciadv.abq2321

IF: 13.6

2022-01-01

Science Advances

Abstract:Solution-processable all-inorganic CsPbIBr perovskite holds great potential for pure red light-emitting diodes. However, the widely existing defects in this mixed halide perovskite markedly limit the efficiency and stability of present light-emitting diode devices. We here identify that intragrain Ruddlesden-Popper planar defects are primary forms of such defects in the CsPbIBr thin film owing to the lattice strain caused by inhomogeneous halogen ion distribution. To eliminate these defects, we develop a stepwise metastable phase crystallization strategy to minimize the CsPbIBr perovskite lattice strain, which brings planar defect-free CsPbIBr thin film with improved radiative recombination, narrowed emission band, and enhanced spectral stability. Using these high-quality thin films, we fabricate spectrally stable pure red perovskite light-emitting diodes, showing 17.8% external quantum efficiency and 9000 candela meter brightness with color coordinates required by Rec. 2020.
Highly stable lanthanide-doped CsPbI3 perovskite nanocrystals with near-unity quantum yield for efficient red light-emitting diodes

Wenlin Xia,Zhenwei Ren,Zhishuai Zheng,Chengzhao Luo,Jie Li,Wenchen Ma,Yu Chen,XIn Zhou

DOI: https://doi.org/10.1039/d2nr06317d

IF: 6.7

2022-12-14

Nanoscale

Abstract:CsPbI3 perovskite nanocrystals (NCs) are rising as promising photoactive materials for optoelectronic devices. However, the poor phase stability of CsPbI3 NCs has set substantial limitations in their practical application. Herein, the small-sized rare earth La cation is strategically introduced to fundamentally improve the NC phase stability against the environment, heating, and UV radiation by partial substitution of Pb ion for suppressed structural distortion and enlarged formation energy. Meanwhile, the strong interaction between La and I of the octahedra has been demonstrated to enable an effective suppression of the trap states, which promotes strengthened radiative recombination for a near-unity photoluminescence quantum yield (PLQY) of 99.3%. Simultaneously, high energy bands are also found for the La-doped NCs to narrow down the energy barrier for efficient hole injection. The superior optoelectronic properties of La-doped NCs promote great improvements in the perovskite light-emitting diode (PeLED) performances with a 5-fold improvement in external quantum efficiency (EQE) from 1.19 to 6.01% and 2-fold longer lifetime from 1451 to 2956 s. Consequently, this work reports an effective way for small-sized metal ion-doped CsPbI3 NCs to realize high emission efficiency and phase stabilization for efficient PeLEDs.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Targeted Elimination of Tetravalent-Sn-induced Defects for Enhanced Efficiency and Stability in Lead-Free NIR-II Perovskite LEDs

Xiang Guan,Yuqing Li,Yuanyuan Meng,Kongxiang Wang,Kebin Lin,Yujie Luo,Jing Wang,Zhongtao Duan,Hong Liu,Liu Yang,Lingfang Zheng,Junpeng Lin,Yalian Weng,Fengxian Xie,Jianxun Lu,Zhanhua Wei

DOI: https://doi.org/10.1038/s41467-024-54160-x

IF: 16.6

2024-01-01

Nature Communications

Abstract:Eco-friendly Sn-based perovskites show significant potential for high-performance second near-infrared window light-emitting diodes (900 nm - 1700 nm). Nevertheless, achieving efficient and stable Sn-based perovskite second near-infrared window light-emitting diodes remains challenging due to the propensity of Sn2+ to oxidize, resulting in detrimental Sn4+-induced defects and compromised device performance. Here, we present a targeted strategy to eliminate Sn4+-induced defects through moisture-triggered hydrolysis of tin tetrahalide, without degrading Sn2+ in the CsSnI3 film. During the moisture treatment, tin tetrahalide is selectively hydrolyzed to Sn(OH)4, which provides sustained protection. As a result, we successfully fabricate second near-infrared window light-emitting diodes emitting at 945 nm, achieving a performance breakthrough with an external quantum efficiency of 7.6% and an operational lifetime reaching 82.6 h.
A NEW LEAD‐FREE Cs12Zn3.1Mn0.9Cl20 PEROVSKITE MATERIAL for LIGHT‐EMITTING DIODES

Zhenzhen Zhu,Yurou Wang,Yihan Li,Yuntao Yu,Dawei Zhang,Honge Wu,Zongrui Zhang

DOI: https://doi.org/10.1002/pssr.202300445

2024-01-26

physica status solidi (RRL) - Rapid Research Letters

Abstract:Lead‐containing halide perovskite materials' toxicity and instability severely restrict their ability to be used in further commercial applications. Here, we report on a new lead‐free and thermal stable Cs12Zn3.1Mn0.9Cl20 perovskite material obtained via a simple room temperature precipitation method. A high photoluminescence quantum yield (PLQY) of 83.1% can be obtained from the perovskite material Cs12Zn3.1Mn0.9Cl20, which is typically made up of tetragonal vertices and is excitable by ultraviolet (UV) light. More importantly, the relative photoluminescence (PL) intensity still retains roughly 60% of that at 30 °C when the temperature continuously increases to 130 °C. And the time‐resolved PL decay lifetime is calculated to be 3.40 ms. With the color coordinates at (0.208 and 0.683) provided by the Commission Internationale de L'Eclairage (CIE), a bright green light‐emitting diode (LED) can be created using the green‐emitting Cs12Zn3.1Mn0.9Cl20 perovskite material. Meanwhile, a warm white LED device with the CIE color coordinates at (0.374, 0.289) and a low color‐correlated temperature (CCT) of 3245 K was fabricated by the Cs12Zn3.1Mn0.9Cl20 perovskite material combining with a commercial blue and red‐emitting phosphors on a UV InGaN chip. This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary
Efficient Near-Infrared Light-Emitting Diodes Based on Organometallic Halide Perovskite-Poly(2-ethyl-2-oxazoline) Nanocomposite Thin Films.

Hong Lin,Lu Zhu,He Huang,Claas J. Reckmeier,Chunjun Liang,Andrey L. Rogach,Wallace C. H. Choy

DOI: https://doi.org/10.1039/c6nr08195a

IF: 6.7

2016-01-01

Nanoscale

Abstract:Organometallic halide perovskites have recently drawn considerable attention for applications in light emission diodes (LEDs). However, the small exciton binding energy of the CH3NH3PbI3 perovskite has the concerns of large exciton dissociation and low radiative recombination on its use in near-infrared LEDs (NIR-LEDs). Herein, we propose and demonstrate that the introduction of poly(2-ethyl-2-oxazoline) (PEtOz) into the perovskite can simultaneously improve the recombination rate and radiative decay rate for improving perovskite LED performances. Additionally, our approach results in smooth perovskite films with increased thickness, reduced roughness, and pin-hole free, which facilitates other film deposition on top for practical device fabrication, and reduces current leakage. After optimizing the perovskite-PEtOz nanocomposite emission layer in NIR-LEDs (emission peak at 760 nm), a high radiance of 12.3 W sr-1 m-2 and 70-fold enhancement of the external quantum efficiency (EQE) compared to that of the pristine perovskite case are achieved. The maximum EQE reaches 0.76%, which is the highest EQE reported so far for the CH3NH3PbI3 based NIR-LEDs. The simplicity of our fabrication approach combined with the outstanding device performances further highlights the enormous potential of perovskite-based LEDs.
High‐Quality γ‐CsPbI3 Cuboid Crystallites Grown by Amorphous‐Complex Conversion for Efficient and Bright Deep‐Red Light‐Emitting Diodes

Zhen‐Yu Ma,Bai‐Sheng Zhu,Xue‐Chen Ru,Yi‐Chen Yin,Li‐Zhe Feng,Guan‐Jie Ding,Mei‐Yu Zhou,Yong‐Hui Song,Hong‐Min Zhou,Cheng‐Ming Wang,Jing‐Ming Hao,Hong‐Bin Yao

DOI: https://doi.org/10.1002/adom.202400722

IF: 9

2024-06-01

Advanced Optical Materials

Abstract:An amorphous complex‐seed‐crystal growth route is developed to prepare high‐quality γ‐CsPbI3 cuboid crystallite thin films. These films enable highly efficient and stable deep‐red LEDs, showing a high maximum EQE of 16.5% and significantly suppressed efficiency roll‐off. Inorganic CsPbI3 perovskite has great potential to fabricate deep‐red light‐emitting diodes (LEDs) owing to excellent color purity, thermal stability, and carrier mobility. However, fabricating high‐quality CsPbI3 thin films for high‐performance LEDs remains challenging. While it is demonstrated that hydrogen bonds between organic ammonium cations and molecule additives can lead to high‐quality organic–inorganic hybrid perovskite films, this method cannot be applied to CsPbI3 thin films due to the absence of hydrogen bonds between Cs+ ions and additives. In this study, an amorphous complex‐seed‐crystal growth process to fabricate high‐quality γ‐CsPbI3 cuboid crystallite thin films, is reported. During the initial annealing, the metastable intermediates formed crystal nucleate seeds and transformed into amorphous complex intermediates, maintaining stability at an elevated temperature for perovskite crystallization. With prolonged annealing, the amorphous complex around the nucleate seeds gradually converts to γ‐CsPbI3 perovskite, enabling us to fabricate CsPbI3 thin films with high crystallinity and orientation. The resulting deep‐red LEDs exhibit a peak external quantum efficiency (EQE) of 16.5% and a high maximum luminance of 3158 cd m−2. Moreover, the devices show significantly suppressed efficiency roll‐off, maintaining an EQE of 14.8% even under a high current density of 500 mA cm−2.

materials science, multidisciplinary,optics
Efficient All-Inorganic Perovskite Light-Emitting Diodes Enabled by Simultaneous Growth Regulation and Defect Passivation

Chunyang Xu,Kun Zhang,Yingqun Gong,Yingguo Yang,Lin Wang,Chengxi Zhang,Xuyong Yang

DOI: https://doi.org/10.1109/ted.2024.3418724

IF: 3.1

2024-07-26

IEEE Transactions on Electron Devices

Abstract:Metal-halide perovskites(MHPs) have attracted widespread attention as the next-generation luminescent materials due to their excellent emission characteristics, such as narrowband emission and tunable color. Compared with hybrid perovskites, all-inorganic perovskites have better thermal and chemical stability and can therefore provide the basis for high-performance light-emitting diodes (LEDs) with reasonable operating stability. However, due to the large grain size and relatively poor surface quality of inorganic perovskites, the radiation recombination efficiency is inefficient, leading to a reduced efficiency of LED devices. Here, we employed the additive [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) for a straightforward in situ reaction with three-dimensional (3-D) inorganic perovskite. 2PACz forms a covalent bond with under-coordinated lead atoms on the perovskite surface, effectively passivating surface defects and enhancing radiative recombination efficiency. Simultaneously, crystal growth was controlled to obtain high-quality inorganic perovskite thin films with a smooth surface and small grain size. This approach not only reduces trap density in the perovskite but also maintains excellent charge transport characteristics of 3-D perovskite. Consequently, we fabricated a perovskite light-emitting diode (PeLED) with a maximum brightness of 13 192 cd m−2, an external quantum efficiency (EQE) of up to 20.87%, and a half-lifetime of 479 h (at 100 cd m−2).

engineering, electrical & electronic,physics, applied
Sulfate-Passivated CsPbI 3 Perovskite Nanocrystals for Efficient Red Light-Emitting Diodes

Hongrui Cheng,Wensong Wang,Haijiang Qiu,Fushan Li,Yuanhui Zheng

DOI: https://doi.org/10.1021/acsanm.3c05808

IF: 6.14

2024-03-20

ACS Applied Nano Materials

Abstract:Due to their excellent optical performance, lead halide perovskite nanocrystals (PeNCs) have been widely used in optoelectronic devices. However, the presence of surface defects such as localized trap states severely hampers their practical application in optoelectronic fields. In this work, we have developed a simple method to reduce surface defects by introducing sulfuric acid after the nucleation of CsPbI3 PeNCs is complete. Sulfate ions effectively interact with the exposed metal lead ions on the surface of perovskite NCs, leading to surface passivation. This process represses nonradiative recombination and significantly enhances the luminescence efficiency of PeNCs. Moreover, the passivated CsPbI3 PeNCs with SO4 2– exhibit a lower overall energy-level structure compared to that of pristine CsPbI3 PeNCs, promoting improved electron injection. Benefiting from this highly effective passivation strategy, light-emitting diodes (LEDs) based on SO4 2–-passivated PeNCs exhibit an optimal external quantum yield of 9.94% and luminance of 2182 cd m–2, surpassing the performance of LEDs made from pristine PeNCs.

materials science, multidisciplinary,nanoscience & nanotechnology
Mg2+-Assisted Passivation of Defects in CsPbI3 Perovskite Nanocrystals for High-Efficiency Photoluminescence.

Ke Xing,Jialong Zhao,Yunjun Wang,Qiuhong Chen,Sheng Cao,Ruosheng Zeng,Mei Ning

DOI: https://doi.org/10.1021/acs.jpclett.1c03258

2021-11-09

Abstract:CsPbI3 perovskite nanocrystals (NCs) are emerging as promising materials for optoelectronic devices because of their superior optical properties. However, the poor stability of CsPbI3 NCs has become a huge bottleneck for practical applications. Herein, we report an effective strategy of Mg2+-assisted passivation of surface defects to obtain high emission efficiency and stability in CsPbI3 NCs. It is found that the introduced Mg2+ ions are mainly distributed on the surface of NCs and then passivate the NC defects, enhancing radiative decay rate and reducing nonradiative decay rate. As a result, the as-prepared Mg2+-treated CsPbI3 (Mg-CsPbI3) NCs exhibit the highest photoluminescence quantum yield (PLQY) of 95%. The Mg-CsPbI3 NC colloidal solution retains 80% of its original PLQY after 80 days of atmosphere exposure. The red perovskite light-emitting diodes based on the Mg-CsPbI3 NCs demonstrate an external quantum efficiency of 8.4%, which shows an almost 4-fold improvement compared to the devices based on the untreated NCs.

Medicine,Materials Science,Chemistry,Physics
Air Stable and Highly Efficient Bi3+-doped Cs2SnCl6 for Blue Light-Emitting Diodes.

Yue Yao,Si-Wei Zhang,Zijian Liu,Chun-Yun Wang,Ping Liu,Lan Ma,Guodan Wei,Feiyu Kang

DOI: https://doi.org/10.1039/d1ra03622j

IF: 4.036

2021-01-01

RSC Advances

Abstract:Cs2SnCl6 perovskite has recently attracted attention as a promising optoelectronic material owing to its better stability and reduced toxicity than its lead counterparts. However, its luminescence performance hardly satisfies the requirements. Hence, a series of Bi3+-doped Cs2SnCl6 (Cs2SnCl6:Bi3+) with enhanced luminescence were synthesized by a solution-phase route. The results show that the initial concentration of Sn2+ can adjust the nucleation density and the quality of the crystal nucleus growth, which will affect the Bi3+ doping amount, crystal morphology, and photophysical properties of Cs2SnCl6:Bi3+. Cs2SnCl6:Bi3+ shows excellent stability in the atmosphere with a photoluminescence (PL) of around 456 nm and a photoluminescence quantum yield (PLQY) of 31%. The luminescence performance results from [BiSn4+ 3+ + VCl] defects caused by the Bi3+ doping. The blue LED based on the Cs2SnCl6:Bi3+ phosphor exhibits a long life of about 120 h and a Commission Internationale de L'Eclairage (CIE) color coordinates of (0.14, 0.11). This work demonstrates a strategy for Bi-doped perovskites with good stability. This investigation will facilitate the development of Cs2SnCl6:Bi3+ for blue LED applications.
Solution-processed Highly Bright and Durable Cesium Lead Halide Perovskite Light-Emitting Diodes.

Zhanhua Wei,Ajay Perumal,Rui Su,Shendre Sushant,Jun Xing,Qing Zhang,Swee Tiam Tan,Hilmi Volkan Demir,Qihua Xiong

DOI: https://doi.org/10.1039/c6nr05330k

IF: 6.7

2016-01-01

Nanoscale

Abstract:Recently, CsPbBr3 perovskites have been emerging as very promising green emission materials for light-emitting diodes (LEDs) due to their high color purity, low cost and high photoluminescence quantum yield (PLQY). However, the corresponding LED performance is still low and far behind CH3NH3PbBr3; it is due to the lack of proper perovskite film preparation methods and interfacial engineering. Herein, we report highly bright and durable CsPbBr3-based LEDs fabricated using a one-step solution method. The precursor solution is prepared by simply dissolving CsPbBr3 powder and a CsBr additive in dimethyl sulfoxide (DMSO). We find that the CsBr additive not only significantly enhances the PLQY but also induces directional crystal growth into micro-plates, forming a smooth perovskite film for LEDs. LEDs employing such high quality films show a high luminance of 7276 cd m-2 and high color purity with a full width at half maximum of 18 nm. Furthermore, the as-fabricated LEDs reveal an outstanding ambient stability with a decent luminance output (>100 cd m-2, steady increase without any degradation trend) for at least 15 h under a constant driving current density (66.7 mA cm-2). And we propose two reasons for this unique luminance increasing behavior: (1) the CsPbBr3 perovskite is thermally stable and can survive from joule heat; and (2) on the other hand, the joule heating will induce interface or crystalline film annealing, reduce device resistance and then enhance the luminance output.
Additive treatment yields high-performance lead-free perovskite light-emitting diodes

Hao Min,Jin Chang,Yunfang Tong,Jiaqi Wang,Fang Zhang,Ziqian Feng,Xiaoying Bi,Nana Chen,Zhiyuan Kuang,Saixue Wang,Lingzhi Yuan,Haokun Shi,Nian Zhao,Dongmin Qian,Shuang Xu,Lin Zhu,Nana Wang,Wei Huang,Jianpu Wang

DOI: https://doi.org/10.1038/s41566-023-01231-y

IF: 35

2023-06-20

Nature Photonics

Abstract:Tin (Sn)-based perovskites are promising for realizing lead-free perovskite light-emitting diodes 1,2 , yet achieving high efficiency devices remains a significant challenge due to the presence of high density of defects in Sn perovskites 3,4 . The formation of defects in Sn perovskites is still not well understood. Here, by using in-situ spectroscopy, we reveal that major defects in Sn perovskites instantly form during the fast aggregation of clusters at the initial growth process (~15 s from the start of the spin-coating process) and ~80% of the luminescence intensity is quenched within 6 s. We further find that additives that form strong chemical interactions with tin (II) iodide in precursor solutions can effectively prevent the fast aggregation of clusters and avoid the formation of luminescence quenchers. With this approach, efficient near-infrared lead-free perovskite light-emitting diodes with an external quantum efficiency of 8.3% are demonstrated.

optics,physics, applied
Boosting CsSnI3‐based near‐infrared perovskite light‐emitting diodes performance via solvent coordination engineering

Yuqing Li,Xiang Guan,Yuanyuan Meng,Jingfu Chen,Junpeng Lin,Xi Chen,Chia‐Yun Liu,Yaping Zhao,Qin Zhang,Chengbo Tian,Jianxun Lu,Zhanhua Wei

DOI: https://doi.org/10.1002/inf2.12537

2024-02-23

InfoMat

Abstract:To mitigate Sn2+ oxidation and rapid crystallization in Sn‐based perovskite, we investigated the effects of four different solvents on the crystallization and quality of CsSnI3 film. Compared with DMF, NMP, and GBL solvents, the use of DMSO‐based CsSnI3 films demonstrated efficient inhibition of Sn2+ oxidation and a noticeably reduced crystallization rate. This benefit can be attributed to the strong interaction between the S=O group of DMSO and Sn2+, as well as the formation of SnI2·3DMSO intermediate phase. Due to their unique photoelectric properties, nontoxic tin‐based perovskites are emerging candidates for efficient near‐infrared LEDs. However, the facile oxidation of Sn2+ and the rapid crystallization rate of tin‐based perovskites result in suboptimal film quality, leading to inferior efficiencies of tin‐based perovskite light‐emitting diodes (Pero‐LEDs). In this study, we investigate the influence of commonly used solvents on the quality of the CsSnI3 films. Remarkably, DMSO exhibits a stronger interaction with SnI2, forming a stable intermediate phase of SnI2·3DMSO. This intermediate effectively inhibits the oxidation of Sn2+ and slows down the crystallization rate, bringing in lower defect state density and higher photoluminescence quantum yield of the prepared perovskite films. Consequently, the corresponding Pero‐LEDs achieve a maximum external quantum efficiency (EQE) of 5.6%, among the most efficient near‐infrared Pero‐LEDs. In addition, the device processes ultra‐low efficiency roll‐off and high reproducibility. Our research underscores the crucial role of solvent‐perovskite coordination in determining film quality. These findings offer valuable guidance for screening solvents to prepare highly efficient and stable tin‐based perovskites.

materials science, multidisciplinary
Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr 3 Quantum Dot-Based Inverted Light-Emitting Diodes.

Alagesan Subramanian,Zhenghui Pan,Zhenbo Zhang,Imtiaz Ahmad,Jing Chen,Meinan Liu,Shuang Cheng,Yijun Xu,Jun Wu,Wei Lei,Qasim Khan,Yuegang Zhang

DOI: https://doi.org/10.1021/acsami.8b01684

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:All-inorganic perovskite light emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve a high performance of the device. Basically, device design, control of energy level alignment and reducing energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr3-based PeLED with an inverted architecture using lithium doped TiO2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to a superior device performance. The device exhibits a current efficiency of 3 cd A-1, a luminance efficiency 2210 cd m-2 and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest value among reported CsPbBr3-based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium doped-TiO2 compare to undoped TiO2-based device.
Efficient and Bright Deep‐red Light‐emitting Diodes Based on a Lateral 0D/3D perovskite Heterostructure

You Ke,Jingshu Guo,Decheng Kong,Jingmin Wang,Gunnar Kusch,Chen Lin,Dawei Liu,Zhiyuan Kuang,Dongmin Qian,Fuyi Zhou,Guangbin Zhang,Meiling Niu,Yu Cao,Rachel A. Oliver,Daoxin Dai,Yizheng Jin,Nana Wang,Wei Huang,Jianpu Wang

DOI: https://doi.org/10.1002/adma.202207301

IF: 29.4

2022-12-18

Advanced Materials

Abstract:Bright and efficient deep‐red light‐emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration of deep‐red photons into human tissues. Metal‐halide perovskites have potential to achieve bright and efficient electroluminescence due to their favorable optoelectronic properties. However, efficient and bright perovskite‐based deep‐red LEDs have not been achieved yet, due to either Auger recombination in low‐dimensional perovskites or trap‐assisted nonradiative recombination in three‐dimensional perovskites. Here, we demonstrate a lateral Cs4PbI6/FAxCs1‐xPbI3 (zero‐dimensional/three‐dimensional, 0D/3D) heterostructure, which can enable efficient deep‐red perovskite LEDs at very high brightness. The Cs4PbI6 can facilitate the growth of low‐defect FAxCs1‐xPbI3, and act as low‐refractive‐index grids, which can simultaneously reduce nonradiative recombination and enhance light extraction. Our device reaches a peak external quantum efficiency of 21.0% at a photon flux of 1.75 × 1021 m−2 s−1, which is almost two orders of magnitude higher than that of reported high efficiency deep‐red perovskite LEDs. Our LEDs are suitable for pulse oximeters, showing an error <2% of blood oxygen saturation compared with commercial oximeters. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

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