An Adlerian view of life style.

J. W. Croake

DOI: https://doi.org/10.1002/1097-4679(197507)31:3<513::AID-JCLP2270310333>3.0.CO;2-O

1975-07-01

Journal of Clinical Psychology

Abstract:

What problem does this paper attempt to address?

1D-confined crystallization routes for tungsten phosphides

Gangtae Jin,Christian D. Multunas,James L. Hart,Mehrdad T. Kiani,Quynh P. Sam,Han Wang,Yeryun Cheon,Khoan Duong,David J. Hynek,Hyeuk Jin Han,Ravishankar Sundararaman,Judy J. Cha

2023-09-20

Abstract:Topological materials confined in one-dimension (1D) can transform computing technologies, such as 1D topological semimetals for nanoscale interconnects and 1D topological superconductors for fault-tolerant quantum computing. As such, understanding crystallization of 1D-confined topological materials is critical. Here, we demonstrate 1D-confined crystallization routes during template-assisted nanowire synthesis where we observe diameter-dependent phase selectivity for topological metal tungsten phosphides. A phase bifurcation occurs to produce tungsten monophosphide and tungsten diphosphide at the cross-over nanowire diameter of ~ 35 nm. Four-dimensional scanning transmission electron microscopy was used to identify the two phases and to map crystallographic orientations of grains at a few nm resolution. The 1D-confined phase selectivity is attributed to the minimization of the total surface energy, which depends on the nanowire diameter and chemical potentials of precursors. Theoretical calculations were carried out to construct the diameter-dependent phase diagram, which agrees with experimental observations. Our find-ings suggest a new crystallization route to stabilize topological materials confined in 1D.

Materials Science
Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Jing Gao,Oleg I. Lebedev,Stuart Turner,Yong Feng Li,Yun Hao Lu,Yuan Ping Feng,Philippe Boullay,Wilfrid Prellier,Gustaaf van Tendeloo,Tom Wu

DOI: https://doi.org/10.1021/nl2035089

IF: 10.8

2011-01-01

Nano Letters

Abstract:Rational synthesis of nanowires via the vapor-liquid-solid (VLS) mechanism with compositional and structural controls is vitally important for fabricating functional nanodevices from bottom up. Here, we show that branched indium tin oxide nanowires can be in situ seeded in vapor transport growth using tailored Au-Cu alloys as catalyst. Furthermore, we demonstrate that VLS synthesis gives unprecedented freedom to navigate the ternary In-Sn-O phase diagram, and a rare and bulk-unstable cubic phase can be selectively stabilized in nanowires. The stabilized cubic fluorite phase possesses an unusual almost equimolar concentration of In and Sn, forming a defect-free epitaxial interface with the conventional bixbyite phase of tin-doped indium oxide that is the most employed transparent conducting oxide. This rational methodology of selecting phases and making abrupt axial heterojunctions in nanowires presents advantages over the conventional synthesis routes, promising novel composition-modulated nanomaterials.
Phase-Controlled 1T Transition-Metal Dichalcogenide-Based Multidimensional Hybrid Nanostructures

Hou-Ming Xu,Chao Gu,Xiao-Long Zhang,Lei Shi,Qiang Gao,Shaojin Hu,Shi-Kui Han,Xiao Zheng,Min-Rui Gao,Shu-Hong Yu

DOI: https://doi.org/10.31635/ccschem.021.202000578

2021-01-01

CCS Chemistry

Abstract:Metallic-phase transition-metal dichalcogenides (TMDCs) exhibit unusual physicochemical properties compared with their semiconducting counterparts. However, they are thermodynamically unstable to access and it is even more challenging to construct their metastable-phase heterostructures. Herein, we demonstrate a general solution protocol for phase-controlled synthesis of distorted octahedral 1T WS2-based (1T structure denotes an octahedral coordination for W atom) multidimensional hybrid nanostructures from two-dimensional (2D), one-dimensional (1D), and zero-dimensional (0D) templates. This is realized by tuning the reactivity of tungsten precursor and the interaction between crystal surface and ligands. As a conceptual study on crystal phase- and dimensionality-dependent applications, we find that the three-dimensional (3D) hierarchical architectures achieved, comprising 1T WS2 and 2D Ni3S4, are very active and stable for catalyzing hydrogen evolution. Our results open up a new way to rationally design phase-controlled nanostructures with increased complexity and more elaborate functionalities. [GRAPHICS] .
Experimental discovery of bulk-disclination correspondence

Yang Liu,Shuwai Leung,Feifei Li,Zhi-Kang Lin,Xiufeng Tao,Yin Poo,Jian-Hua Jiang

DOI: https://doi.org/10.1038/s41586-020-03125-3

2020-01-01

Abstract:Most natural and artificial materials have crystalline structures from which abundant topological phases emerge [1-6]. The bulk-edge correspondence, widely-adopted in experiments to determine the band topology from edge properties, however, becomes inadequate in discerning various topological crystalline phases [7-17], leading to great challenges in the experimental classification of the large family of topological crystalline materials [4-6]. Theories predict that disclinations, ubiquitous crystallographic defects, provide an effective probe of crystalline topology beyond edges [18-21], which, however, has not yet been confirmed in experiments. Here, we report the experimental discovery of the bulk-disclination correspondence which is manifested as the fractional spectral charge and robust bound states at the disclinations. The fractional disclination charge originates from the symmetry-protected bulk charge patterns---a fundamental property of many topological crystalline insulators (TCIs). Meanwhile, the robust bound states at disclinations emerge as a secondary, but directly observable property of TCIs. Using reconfigurable photonic crystals as photonic TCIs with higher-order topology, we observe those hallmark features via pump-probe and near-field detection measurements. Both the fractional charge and the localized states are demonstrated to emerge at the disclination in the TCI phase but vanish in the trivial phase. The experimental discovery of bulk-disclination correspondence unveils a novel fundamental phenomenon and a new paradigm for exploring topological materials.
Local Engineering of Topological Phase in Monolayer MoS 2

Zhichang Wang,Xiaoqiang Liu,Jianqi Zhu,Sifan You,Ke Bian,Guangyu Zhang,Ji Feng,Ying Jiang

DOI: https://doi.org/10.1016/j.scib.2019.10.004

IF: 18.9

2019-01-01

Science Bulletin

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with the 1T' structure are a new class of large-gap two-dimensional (2D) topological insulators, hosting topologically protected conduction channels on the edges. However, the 1T' phase is metastable compared to the 2H phase for most of 2D TMDCs, among which the 1T' phase is least favored in monolayer MoS2. Here we report a clean and controllable technique to locally induce nanometer-sized 1T' phase in monolayer 2H-MoS2 via a weak Argon-plasma treatment, resulting in topological phase boundaries of high density. We found that the stabilization of 1T' phase arises from the concerted effects of S vacancies and the tensile strain. Scanning tunneling spectroscopy (STS) clearly reveals a spin-orbit band gap (similar to 60 meV) and topologically protected in-gap states residing at the 1T'-2H phase boundary, which are corroborated by density-functional theory (DFT) calculations. The strategy developed in this work can be generalized to a large variety of TMDCs materials, with potentials to realize scalable electronics and spintronics with low dissipation. (C) 2019 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
Unraveling High‐Yield Phase‐Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates

Xinmao Yin,Chi Sin Tang,Di Wu,Weilong Kong,Changjian Li,Qixing Wang,Liang Cao,Ming Yang,Yung-Huang Chang,Dianyu Qi,Fangping Ouyang,Stephen J. Pennycook,Yuan Ping Feng,Mark B. H. Breese,Shi Jie Wang,Wenjing Zhang,Andrivo Rusydi,Andrew T. S. Wee

DOI: https://doi.org/10.1002/advs.201802093

IF: 15.1

2019-01-01

Advanced Science

Abstract:2D transition metal dichalcogenides (2D-TMDs) and their unique polymorphic features such as the semiconducting 1H and quasi-metallic 1T' phases exhibit intriguing optical and electronic properties, which can be used in novel electronic and photonic device applications. With the favorable quasi-metallic nature of 1T'-phase 2D-TMDs, the 1H-to-1T' phase engineering processes are an immensely vital discipline exploited for novel device applications. Here, a high-yield 1H-to-1T' phase transition of monolayer-MoS2 on Cu and monolayer-WSe2 on Au via an annealing-based process is reported. A comprehensive experimental and first-principles study is performed to unravel the underlying mechanism and derive the general trends for the high-yield phase transition process of 2D-TMDs on metallic substrates. While each 2D-TMD possesses different intrinsic 1H-1T' energy barriers, the option of metallic substrates with higher chemical reactivity plays a significantly pivotal role in enhancing the 1H-1T' phase transition yield. The yield increase is achieved via the enhancement of the interfacial hybridizations by the means of increased interfacial binding energy, larger charge transfer, shorter interfacial spacing, and weaker bond strength. Fundamentally, this study opens up the field of 2D-TMD/metal-like systems to further scientific investigation and research, thereby creating new possibilities for 2D-TMDs-based device applications.
Local engineering of topological phase in monolayer MoS2

Zhichang Wang,Xiaoqiang Liu,Jianqi Zhu,Sifan You,Ke Bian,Guangyu Zhang,Ji Feng,Ying Jiang

DOI: https://doi.org/10.1016/j.scib.2019.10.004

IF: 18.9

2019-12-01

Science Bulletin

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with the 1T' structure are a new class of large-gap two-dimensional (2D) topological insulators, hosting topologically protected conduction channels on the edges. However, the 1T' phase is metastable compared to the 2H phase for most of 2D TMDCs, among which the 1T' phase is least favored in monolayer MoS<sub>2</sub>. Here we report a clean and controllable technique to locally induce nanometer-sized 1T' phase in monolayer 2H-MoS<sub>2</sub> via a weak Argon-plasma treatment, resulting in topological phase boundaries of high density. We found that the stabilization of 1T' phase arises from the concerted effects of S vacancies and the tensile strain. Scanning tunneling spectroscopy (STS) clearly reveals a spin-orbit band gap (~60 meV) and topologically protected in-gap states residing at the 1T'-2H phase boundary, which are corroborated by density-functional theory (DFT) calculations. The strategy developed in this work can be generalized to a large variety of TMDCs materials, with potentials to realize scalable electronics and spintronics with low dissipation.

multidisciplinary sciences
A gate-tunable quantum phase transition in a topological excitonic insulator

Yande Que,Yang-Hao Chan,Junxiang Jia,Anirban Das,Zhengjue Tong,Yu-Tzu Chang,Zhenhao Cui,Amit Kumar,Gagandeep Singh,Hsin Lin,Shantanu Mukherjee,Bent Weber

DOI: https://doi.org/10.1002/adma.202309356

2023-09-28

Abstract:Coulomb interactions among electrons and holes in two-dimensional (2D) semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non-trivial band topology are atomic monolayers of tungsten ditelluride (WTe2), in which a 2D topological excitonic insulator (2D TEI) forms. However, the detailed mechanism of the 2D bulk gap formation in WTe2, in particular with regard to the role of Coulomb interactions, has remained a subject of ongoing debate. Here, we show that WTe2 is susceptible to a gate-tunable quantum phase transition, evident from an abrupt collapse of its 2D bulk energy gap upon ambipolar field-effect doping. Such gate tunability of a 2D TEI, into either n- and p-type semimetals, promises novel handles of control over non-trivial 2D superconductivity with excitonic pairing.

Strongly Correlated Electrons
A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Yande Que,Yang‐Hao Chan,Junxiang Jia,Anirban Das,Zhengjue Tong,Yu‐Tzu Chang,Zhenhao Cui,Amit Kumar,Gagandeep Singh,Shantanu Mukherjee,Hsin Lin,Bent Weber

DOI: https://doi.org/10.1002/adma.202309356

IF: 29.4

2023-11-28

Advanced Materials

Abstract:Coulomb interactions among electrons and holes in two‐dimensional (2D) semimetals with overlapping valence and conduction bands can give rise to a correlated insulating ground state via exciton formation and condensation. One candidate material in which such excitonic state uniquely combines with non‐trivial band topology are atomic monolayers of tungsten ditelluride (WTe2), in which a 2D topological excitonic insulator (2D TEI) forms. However, the detailed mechanism of the 2D bulk gap formation in WTe2, in particular with regard to the role of Coulomb interactions, has remained a subject of ongoing debate. Here, we show that WTe2 is susceptible to a gate‐tunable quantum phase transition, evident from an abrupt collapse of its 2D bulk energy gap upon ambipolar field‐effect doping. Such gate tunability of a 2D TEI, into either n‐ and p‐type semimetals, promises novel handles of control over non‐trivial 2D superconductivity with excitonic pairing. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

Lixuan Xu,Yiwei Li,Yuqiang Fang,Huijun Zheng,Wujun Shi,Cheng Chen,Ding Pei,Donghui Lu,Makoto Hashimoto,Meixiao Wang,Lexian Yang,Xiao Feng,Haijun Zhang,Fuqiang Huang,Qikun Xue,Ke He,Zhongkai Liu,Yulin Chen

DOI: https://doi.org/10.1002/adma.202300227

IF: 29.4

2023-03-06

Advanced Materials

Abstract:The evolution of the physical properties of two‐dimensional material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'‐phase transition metal dichalcogenides (1T'‐TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal two‐dimensional building blocks of various three‐dimensional topological phases. However, the stacking geometry was previously limited to the bulk 1T'‐WTe2 type. Here, we introduce the novel 2M‐TMDs consisting of translationally stacked 1T'‐monolayers as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization‐dependent angle‐resolved photoemission spectroscopy as well as first‐principles calculations on the electronic structure of 2M‐TMDs, we revealed a topology hierarchy: 2M‐WSe2, MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M‐WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M‐TMDs. We propose that 2M‐TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with two‐dimensional materials. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

Fei-Ting Huang,Seong Joon Lim,Sobhit Singh,Jinwoong Kim,Lunyong Zhang,Jae-Wook Kim,Ming-Wen Chu,Karin M. Rabe,David Vanderbilt,Sang-Wook Cheong

DOI: https://doi.org/10.1038/s41467-019-11949-5

IF: 16.6

2019-09-16

Nature Communications

Abstract:Abstract Much of the dramatic growth in research on topological materials has focused on topologically protected surface states. While the domain walls of topological materials such as Weyl semimetals with broken inversion or time-reversal symmetry can provide a hunting ground for exploring topological interfacial states, such investigations have received little attention to date. Here, utilizing in-situ cryogenic transmission electron microscopy combined with first-principles calculations, we discover intriguing domain-wall structures in MoTe 2 , both between polar variants of the low-temperature( T ) Weyl phase, and between this and the high- T higher-order topological phase. We demonstrate how polar domain walls can be manipulated with electron beams and show that phase domain walls tend to form superlattice-like structures along the c axis. Scanning tunneling microscopy indicates a possible signature of a conducting hinge state at phase domain walls. Our results open avenues for investigating topological interfacial states and unveiling multifunctional aspects of domain walls in topological materials.

multidisciplinary sciences
Engineering artificial topological phases via superlattices

Pavel P. Shibayev,Elio J. König,Maryam Salehi,Jisoo Moon,Myung-Geun Han,Seongshik Oh

DOI: https://doi.org/10.1021/acs.nanolett.8b03751

2018-09-18

Abstract:The search for new topological materials and states of matter is presently at the forefront of quantum materials research. One powerful approach to novel topological phases beyond the thermodynamic space is to combine different topological/functional materials into a single materials platform in the form of superlattices. However, despite some previous efforts, there has been a significant gap between theories and experiments in this direction. Here, we provide the first detailed set of experimentally-verifiable phase diagrams of topological superlattices composed of archetypal topological insulator (TI), Bi$_{2}$Se$_{3}$, and normal insulator (NI), In$_{2}$Se$_{3}$, by combining molecular-level materials control, low-temperature magnetotransport measurements, and field theoretical calculations. We show how the electronic properties of topological superlattices evolve with unit-layer thicknesses and utilize the weak antilocalization effect as a tool to gain quantitative insights into the evolution of conducting channels within each set of heterostructures. This orchestrated study opens the door to the possibility of creating a variety of artificial-topological-phases by combining topological materials with various other functional building blocks such as superconductors and magnetic materials.

Mesoscale and Nanoscale Physics
Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Jianwei Huang,Sheng Li,Chiho Yoon,Ji Seop Oh,Han Wu,Xiaoyuan Liu,Nikhil Dhale,Yan-Feng Zhou,Yucheng Guo,Yichen Zhang,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Xiqu Wang,Chun Ning Lau,Robert J. Birgeneau,Fan Zhang,Bing Lv,Ming Yi

DOI: https://doi.org/10.1103/physrevx.11.031042

2021-01-01

Physical Review X

Abstract:Quasi-one-dimensional (1D) materials provide a superior platform for characterizing and tuning topological phases for two reasons: (i) existence for multiple cleavable surfaces that enables better experimental identification of topological classification and (ii) stronger response to perturbations such as strain for tuning topological phases compared to higher dimensional crystal structures. In this paper, we present experimental evidence for a room-temperature topological phase transition in the quasi-1D material Bi4I4, mediated via a first-order structural transition between two distinct stacking orders of the weakly coupled chains. Using high-resolution angle-resolved photoemission spectroscopy on the two natural cleavable surfaces, we identify the high-temperature beta phase to be the first weak topological insulator with two gapless Dirac cones on the (100) surface and no Dirac crossing on the (001) surface, while in the low-temperature a phase, the topological surface state on the (100) surface opens a gap, consistent with a recent theoretical prediction of a higher-order topological insulator beyond the scope of the established topological materials databases that hosts gapless hinge states. Our results not only identify a rare topological phase transition between first-order and second-order topological insulators but also establish a novel quasi-1D material platform for exploring unprecedented physics.
Topological Weyl phase transition in Mo W Te

Ilya Belopolski,Daniel S Sanchez,Yukiaki Ishida,Peng Yu,Songtian S Zhang,Tay-Rong Chang,Guoqing Chang,Xingchen Pan,Hong Lu,Hao Zheng,Su-Yang Xu,Baigeng Wang,Guang Bian,Da-Wei Fu,Shisheng Li,Goki Eda,Horng-Tay Jeng,Takeshi Kondo,Shuang Jia,Hsin Lin,Zheng Liu,Fengqi Song,Shik Shin,M Zahid Hasan

2016-01-01

Abstract:Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo W Te with changing composition . Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at , showing the critical point of a topological Weyl phase transition. For Mo dopings , we observe no Fermi arc, while for , the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.
Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-Layer WSe2

Miguel M. Ugeda,Artem Pulkin,Shujie Tang,Hyejin Ryu,Quansheng Wu,Yi Zhang,Dillon Wong,Zahra Pedramrazi,Ana Martín-Recio,Yi Chen,Feng Wang,Zhi-Xun Shen,Sung-Kwan Mo,Oleg V. Yazyev,Michael F. Crommie

DOI: https://doi.org/10.1038/s41467-018-05672-w

IF: 16.6

2018-01-01

Nature Communications

Abstract:Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers. The QSHI nature of single-layer 1T'-WSe2 is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.
Strain-induced two-dimensional topological crystalline insulator

Liwei Jing,Mohammad Amini,Adolfo O. Fumega,Orlando J. Silveira,Jose L. Lado,Peter Liljeroth,Shawulienu Kezilebieke

2024-10-09

Abstract:Topological crystalline insulators (TCIs) host topological phases of matter protected by crystal symmetries. Topological surface states in three-dimensional TCIs have been predicted and observed in IV-VI SnTe-class semiconductors. Despite the prediction of a two-dimensional (2D) TCI characterized by two pairs of edge states inside the bulk gap, materials challenges have thus far prevented its experimental realization. Here we report the growth and characterization of bilayer SnTe on the 2$H$-NbSe$_2$ substrate by molecular beam epitaxy and scanning tunneling microscopy. We experimentally observe two anticorrelated, periodically modulated pairs of conducting edge states along the perimeters of the sample with a large band gap exceeding $0.2$ eV. We identify these states with a 2D TCI through first principles calculations. Finally, we probe the coupling of adjacent topological edge states and demonstrate the resulting energy shift driven by a combination of electrostatic interactions and tunneling coupling. Our work opens the door to investigations of tunable topological states in 2D TCIs, of potential impact for spintronics and nanoelectronics applications at room temperature.

Mesoscale and Nanoscale Physics,Materials Science
Controllable Strain-driven Topological Phase Transition and Dominant Surface State Transport in High-Quality HfTe5 Samples

Jinyu Liu,Yinong Zhou,Sebastian Yepez Rodriguez,Matthew A. Delmont,Robert A. Welser,Nicholas Sirica,Kaleb McClure,Paolo Vilmercati,Joseph W. Ziller,Norman Mannella,Javier D. Sanchez-Yamagishi,Michael T. Pettes,Ruqian Wu,Luis A. Jauregui

2023-04-18

Abstract:Controlling materials to create and tune topological phases of matter could potentially be used to explore new phases of topological quantum matter and to create novel devices where the carriers are topologically protected. It has been demonstrated that a trivial insulator can be converted into a topological state by modulating the spin-orbit interaction or the crystal lattice. However, there are limited methods to controllably and efficiently tune the crystal lattice and at the same time perform electronic measurements at cryogenic temperatures. Here, we use large controllable strain to demonstrate the topological phase transition from a weak topological insulator phase to a strong topological insulator phase in high-quality HfTe5 samples. After applying high strain to HfTe5 and converting it into a strong topological insulator, we found that the sample's resistivity increased by more than two orders of magnitude (24,000%) and that the electronic transport is dominated by the topological surface states at cryogenic temperatures. Our findings show that HfTe5 is an ideal material for engineering topological properties, and it could be generalized to study topological phase transitions in van der Waals materials and heterostructures. These results can pave the way to create novel devices with applications ranging from spintronics to fault-tolerant topologically protected quantum computers.

Materials Science
Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

Hong En Lim,Yusuke Nakanishi,Zheng Liu,Jiang Pu,Mina Maruyama,Takahiko Endo,Chisato Ando,Hiroshi Shimizu,Kazuhiro Yanagi,Susumu Okada,Taishi Takenobu,Yasumitsu Miyata

DOI: https://doi.org/10.1021/acs.nanolett.0c03456

IF: 10.8

2020-12-14

Nano Letters

Abstract:The development of bulk synthetic processes to prepare functional nanomaterials is crucial to achieve progress in fundamental and applied science. Transition-metal chalcogenide (TMC) nanowires, which are one-dimensional (1D) structures having three-atom diameters and van der Waals surfaces, have been reported to possess a 1D metallic nature with great potential in electronics and energy devices. However, their mass production remains challenging. Here, a wafer-scale synthesis of highly crystalline transition-metal telluride nanowires is demonstrated by chemical vapor deposition. The present technique enables formation of either aligned, atomically thin two-dimensional (2D) sheets or random networks of three-dimensional (3D) bundles, both composed of individual nanowires. These nanowires exhibit an anisotropic 1D optical response and superior conducting properties. The findings not only shed light on the controlled and large-scale synthesis of conductive thin films but also provide a platform for the study on physics and device applications of nanowire-based 2D and 3D crystals.This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires

Sara Martí-Sánchez,Dags Olsteins,Charalampos Lampadaris,Damon James Carrad,Yu Liu,Judith Quiñones,Maria Chiara Spadaro,Thomas Sand Jespersen,Peter Krogstrup,Jordi Arbiol,Sabbir A. Khan

DOI: https://doi.org/10.1021/acsnano.3c02733

IF: 17.1

2023-06-16

ACS Nano

Abstract:Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality and crystal structure flexibility facilitate unique heterostructure growth and efficient material optimization, crucial prerequisites for accurately constructing complex multicomponent quantum materials. Here, we present an extensive study of Sn growth on InSb, InAsSb, and InAs nanowires and demonstrate how...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Ilya Belopolski,Daniel S. Sanchez,Y. Ishida,Peng Yu,Songtian S. Zhang,Tay-Rong Chang,Guoqing Chang,Xingchen Pan,Hong Lu,Hao Zheng,Su-Yang Xu,Baigeng Wang,Guang Bian,Da-Wei Fu,Shisheng Li,Goki Eda,Horng-Tay Jeng,Takeshi Kondo,Shuang Jia,Hsin Lin,Zheng Liu,Fengqi Song,Shik Shin,M. Zahid Hasan

2016-01-01

Abstract:Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c sim 7%$, showing the critical point of a topological Weyl phase transition. For Mo dopings $x x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.

An Adlerian view of life style.

1D-confined crystallization routes for tungsten phosphides

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Phase-Controlled 1T Transition-Metal Dichalcogenide-Based Multidimensional Hybrid Nanostructures

Experimental discovery of bulk-disclination correspondence

Local Engineering of Topological Phase in Monolayer MoS 2

Unraveling High‐Yield Phase‐Transition Dynamics in Transition Metal Dichalcogenides on Metallic Substrates

Local engineering of topological phase in monolayer MoS2

A gate-tunable quantum phase transition in a topological excitonic insulator

A Gate‐Tunable Ambipolar Quantum Phase Transition in a Topological Excitonic Insulator

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

Polar and phase domain walls with conducting interfacial states in a Weyl semimetal MoTe2

Engineering artificial topological phases via superlattices

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Topological Weyl phase transition in Mo W Te

Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-Layer WSe2

Strain-induced two-dimensional topological crystalline insulator

Controllable Strain-driven Topological Phase Transition and Dominant Surface State Transport in High-Quality HfTe5 Samples

Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$